All IGBT. AP25G45EM Datasheet

 

AP25G45EM Datasheet and Replacement


   Type Designator: AP25G45EM
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 2.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic| ⓘ - Maximum Collector Current: 150(pulse) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 24.5 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Package: SO8
 

 AP25G45EM substitution

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AP25G45EM Datasheet (PDF)

 ..1. Size:67K  ape
 ap25g45em.pdf pdf_icon

AP25G45EM

AP25G45EMAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 150A CC4.5V Gate Drive CCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emi

 7.1. Size:67K  ape
 ap25g45gem.pdf pdf_icon

AP25G45EM

AP25G45GEMPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 150A CC4.5V Gate Drive CCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating

 9.1. Size:2013K  cn apm
 ap25g02nf.pdf pdf_icon

AP25G45EM

AP25G02NF 20V N+P-Channel Enhancement Mode MOSFET Description The AP25G02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =32A DS DR

 9.2. Size:1571K  cn apm
 ap25g03gd.pdf pdf_icon

AP25G45EM

AP25G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP25G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =25A DS DR

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Datasheet: SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , GT30J127 , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P , TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF .

Keywords - AP25G45EM transistor datasheet

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