AP25G45EM PDF and Equivalents Search

 

AP25G45EM Specs and Replacement

Type Designator: AP25G45EM

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 2.5 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V

|Ic| ⓘ - Maximum Collector Current: 150(pulse) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6 V @25℃

tr ⓘ - Rise Time, typ: 24.5 nS

Coesⓘ - Output Capacitance, typ: 200 pF

Package: SO8

 AP25G45EM Substitution

- IGBT ⓘ Cross-Reference Search

 

AP25G45EM datasheet

 ..1. Size:67K  ape
 ap25g45em.pdf pdf_icon

AP25G45EM

AP25G45EM Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 450V High Pick Current Capability ICP 150A C C 4.5V Gate Drive C C Strobe Flash Applications C G G E E SO-8 E E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emi... See More ⇒

 7.1. Size:67K  ape
 ap25g45gem.pdf pdf_icon

AP25G45EM

AP25G45GEM Pb Free Plating Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 450V High Pick Current Capability ICP 150A C C 4.5V Gate Drive C C Strobe Flash Applications C G G E E SO-8 E E Absolute Maximum Ratings Symbol Parameter Rating... See More ⇒

 9.1. Size:2013K  cn apm
 ap25g02nf.pdf pdf_icon

AP25G45EM

AP25G02NF 20V N+P-Channel Enhancement Mode MOSFET Description The AP25G02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =32A DS D R ... See More ⇒

 9.2. Size:1571K  cn apm
 ap25g03gd.pdf pdf_icon

AP25G45EM

AP25G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP25G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =25A DS D R ... See More ⇒

SHOW MORE

Specs: SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , GT30J127 , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P , TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF .

History: CPV364M4KPBF

Keywords - AP25G45EM transistor spec

 AP25G45EM cross reference
 AP25G45EM equivalent finder
 AP25G45EM lookup
 AP25G45EM substitution
 AP25G45EM replacement

 

 

 


 
↑ Back to Top
.