AP25G45EM Datasheet and Replacement

   Type Designator: AP25G45EM
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 2.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic| ⓘ - Maximum Collector Current: 150(pulse) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.2 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 24.5 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Qg ⓘ - Total Gate Charge, typ: 64.5 nC
   Package: SO8
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