AP25G45EM IGBT. Datasheet pdf. Equivalent
Type Designator: AP25G45EM
Type: IGBT + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 2.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
|Ic|ⓘ - Maximum Collector Current: 150(pulse) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.2 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 24.5 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Qgⓘ - Total Gate Charge, typ: 64.5 nC
Package: SO8
AP25G45EM Transistor Equivalent Substitute - IGBT Cross-Reference Search
AP25G45EM Datasheet (PDF)
ap25g45em.pdf
AP25G45EMAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 150A CC4.5V Gate Drive CCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emi
ap25g45gem.pdf
AP25G45GEMPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 150A CC4.5V Gate Drive CCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating
Datasheet: SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , SGT50T65FD1PT , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P , TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF .
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