TGPF30N43P IGBT. Datasheet pdf. Equivalent
Type Designator: TGPF30N43P
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 20.8 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 105 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Qgⓘ - Total Gate Charge, typ: 26 nC
Package: TO220F
TGPF30N43P Transistor Equivalent Substitute - IGBT Cross-Reference Search
TGPF30N43P Datasheet (PDF)
tgpf30n43p.pdf
TGPF30N43P Features: 430V Trench Technology High Speed Switching Low Conduction Loss C Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications : Plasma Display Panel, Soft switching application, Ordering Part Number Package Packaging type Marking Remark TGPF30N43P TO-220F Tube TGPF30N4
tgpf30n40p.pdf
TGPF30N40P Features: 400V Trench Technology High Speed Switching Low Conduction Loss C Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications : Plasma Display Panel, Soft switching application, Ordering Part Number Package Packaging type Marking Remark TGPF30N40P TO-220F Tube TGPF30N4
Datasheet: BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P , FGA25N120ANTD , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 , NGTG15N60S1 .
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