All IGBT. TGPF30N43P Datasheet

 

TGPF30N43P Datasheet and Replacement


   Type Designator: TGPF30N43P
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 20.8 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 430 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 105 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Qg ⓘ - Total Gate Charge, typ: 26 nC
   Package: TO220F
 

 TGPF30N43P substitution

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TGPF30N43P Datasheet (PDF)

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TGPF30N43P

TGPF30N43P Features: 430V Trench Technology High Speed Switching Low Conduction Loss C Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications : Plasma Display Panel, Soft switching application, Ordering Part Number Package Packaging type Marking Remark TGPF30N43P TO-220F Tube TGPF30N4

 6.1. Size:922K  trinnotech
 tgpf30n40p.pdf pdf_icon

TGPF30N43P

TGPF30N40P Features: 400V Trench Technology High Speed Switching Low Conduction Loss C Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications : Plasma Display Panel, Soft switching application, Ordering Part Number Package Packaging type Marking Remark TGPF30N40P TO-220F Tube TGPF30N4

Datasheet: BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P , FGA25N120ANTD , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 , NGTG15N60S1 .

History: FGH30S130P

Keywords - TGPF30N43P transistor datasheet

 TGPF30N43P cross reference
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