All IGBT. IXYY8N90C3 Datasheet

 

IXYY8N90C3 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXYY8N90C3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 120 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 24 pF
   Qgⓘ - Total Gate Charge, typ: 13.3 nC
   Package: TO252

 IXYY8N90C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYY8N90C3 Datasheet (PDF)

 ..1. Size:178K  ixys
 ixyy8n90c3.pdf

IXYY8N90C3 IXYY8N90C3

Advance Technical Information900V XPTTM IGBTs VCES = 900VIXYY8N90C3GenX3TM IC110 = 8AIXYP8N90C3 VCE(sat) 2.5V tfi(typ) = 130nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-252 (IXYY)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 900 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 VTO-220 (IXYP)VG

Datasheet: CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 , NGTG15N60S1 , NGTB15N60EG , GT30G124 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 .

 

 
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