IXYY8N90C3 PDF and Equivalents Search

 

IXYY8N90C3 PDF Specs and Replacement


   Type Designator: IXYY8N90C3
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 120 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 24 pF
   Package: TO252
 

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IXYY8N90C3 PDF specs

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IXYY8N90C3

Advance Technical Information 900V XPTTM IGBTs VCES = 900V IXYY8N90C3 GenX3TM IC110 = 8A IXYP8N90C3 VCE(sat) 2.5V tfi(typ) = 130ns High-Speed IGBT for 20-50 kHz Switching TO-252 (IXYY) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 900 V C (Tab) VCGR TJ = 25 C to 175 C, RGE = 1M 900 V VGES Continuous 20 V TO-220 (IXYP) VG... See More ⇒

Specs: CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 , NGTG15N60S1 , NGTB15N60EG , SGT60N60FD1P7 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 .

History: JJT10N65SC

Keywords - IXYY8N90C3 transistor spec

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