All IGBT. IXYY8N90C3 Datasheet

 

IXYY8N90C3 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXYY8N90C3
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 120
   Maximum Collector-Emitter Voltage |Vce|, V: 900
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 20
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.15
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 20
   Collector Capacity (Cc), typ, pF: 24
   Total Gate Charge (Qg), typ, nC: 13.3
   Package: TO252

 IXYY8N90C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYY8N90C3 Datasheet (PDF)

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 ixyy8n90c3.pdf

IXYY8N90C3 IXYY8N90C3

Advance Technical Information900V XPTTM IGBTs VCES = 900VIXYY8N90C3GenX3TM IC110 = 8AIXYP8N90C3 VCE(sat) 2.5V tfi(typ) = 130nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-252 (IXYY)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 900 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 VTO-220 (IXYP)VG

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