IXYY8N90C3 Datasheet. Specs and Replacement

Type Designator: IXYY8N90C3  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 120 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 24 pF

Package: TO252

  📄📄 Copy 

 IXYY8N90C3 Substitution

- IGBTⓘ Cross-Reference Search

 

IXYY8N90C3 datasheet

 ..1. Size:178K  ixys
 ixyy8n90c3.pdf pdf_icon

IXYY8N90C3

Advance Technical Information 900V XPTTM IGBTs VCES = 900V IXYY8N90C3 GenX3TM IC110 = 8A IXYP8N90C3 VCE(sat) 2.5V tfi(typ) = 130ns High-Speed IGBT for 20-50 kHz Switching TO-252 (IXYY) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 900 V C (Tab) VCGR TJ = 25 C to 175 C, RGE = 1M 900 V VGES Continuous 20 V TO-220 (IXYP) VG... See More ⇒

Specs: CPV362M4UPBF, CPV364M4UPBF, CPV364M4FPBF, CPV364M4KPBF, IRGSL4B60K, NGTB15N60S1, NGTG15N60S1, NGTB15N60EG, SGT60N60FD1P7, STGP19NC60K, AP05G120SW-HF, TSG10N120CN, AP05G120NSW-HF, AP20GT60SW, AP20GT60W, CI15T60, MMIX4B12N300

Keywords - IXYY8N90C3 transistor spec

 IXYY8N90C3 cross reference
 IXYY8N90C3 equivalent finder
 IXYY8N90C3 lookup
 IXYY8N90C3 substitution
 IXYY8N90C3 replacement