All IGBT. AP05G120SW-HF Datasheet

 

AP05G120SW-HF IGBT. Datasheet pdf. Equivalent


   Type Designator: AP05G120SW-HF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 21 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 13 nS
   Coesⓘ - Output Capacitance, typ: 65 pF
   Qgⓘ - Total Gate Charge, typ: 33 nC
   Package: TO3P

 AP05G120SW-HF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AP05G120SW-HF Datasheet (PDF)

 ..1. Size:62K  ape
 ap05g120sw-hf.pdf

AP05G120SW-HF AP05G120SW-HF

AP05G120SW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features High Speed Switching VCES 1200V Low Saturation Voltage IC 10.5AVCE(sat)=2.3V@IC=5AC CO-PAK, IGBT With FRD GCTO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter

 6.1. Size:62K  ape
 ap05g120nsw-hf.pdf

AP05G120SW-HF AP05G120SW-HF

AP05G120NSW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR WITH FRD.Features VCES 1200V High Speed Switching IC 10.5A NPT Technology RoHS Compliant & Halogen-FreeGCTO-3PEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 1200 VVGE Gate-Emitter Voltage +30 VIC@TC=25 Col

Datasheet: CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 , NGTG15N60S1 , NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , RJH30E2DPP , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 .

 

 
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