TSG10N120CN Datasheet. Specs and Replacement

Type Designator: TSG10N120CN  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 125 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 21 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 13 nS

Coesⓘ - Output Capacitance, typ: 65 pF

Package: TO3P

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TSG10N120CN datasheet

 ..1. Size:341K  taiwansemi
 tsg10n120cn.pdf pdf_icon

TSG10N120CN

TSG10N120CN N-Channel IGBT with FRD. TO-3P Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 30 10.5 General Description The TSG10N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.... See More ⇒

 8.1. Size:481K  cn wuxi unigroup
 tsg10n06at.pdf pdf_icon

TSG10N120CN

TSG10N06AT Wuxi Unigroup Microelectronics Co.,Ltd. 60V N-Channel DTMOS Product Summary Features Trench Power DTMOS Technology VDS 60V Low RDS(ON) RDS(ON) (at VGS=10V) ... See More ⇒

Specs: CPV364M4KPBF, IRGSL4B60K, NGTB15N60S1, NGTG15N60S1, NGTB15N60EG, IXYY8N90C3, STGP19NC60K, AP05G120SW-HF, SGT40N60FD2PN, AP05G120NSW-HF, AP20GT60SW, AP20GT60W, CI15T60, MMIX4B12N300, NGD8205A, IXYA8N90C3D1, IXYP8N90C3D1

Keywords - TSG10N120CN transistor spec

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