All IGBT. TSG10N120CN Datasheet


TSG10N120CN IGBT. Datasheet pdf. Equivalent

   Type Designator: TSG10N120CN
   Type: IGBT
   Type of IGBT Channel: N-Channel
   Maximum Power Dissipation (Pc), W: 125
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 21
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.3
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 13
   Collector Capacity (Cc), typ, pF: 65
   Package: TO247

 TSG10N120CN Transistor Equivalent Substitute - IGBT Cross-Reference Search


TSG10N120CN Datasheet (PDF)

 ..1. Size:341K  taiwansemi


TSG10N120CN N-Channel IGBT with FRD. TO-3P Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 30 10.5 General Description The TSG10N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

 8.1. Size:481K  cn wuxi unigroup


TSG10N06AT Wuxi Unigroup Microelectronics Co.,Ltd. 60V N-Channel DTMOS Product Summary Features Trench Power DTMOS Technology VDS 60V Low RDS(ON) RDS(ON) (at VGS=10V)

Datasheet: CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 , NGTG15N60S1 , NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , RJP63F3DPP-M0 , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 .


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