TSG10N120CN Datasheet and Replacement
Type Designator: TSG10N120CN
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 21 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 13 nS
Coesⓘ - Output Capacitance, typ: 65 pF
Package: TO3P
- IGBT Cross-Reference
TSG10N120CN Datasheet (PDF)
tsg10n120cn.pdf

TSG10N120CN N-Channel IGBT with FRD. TO-3P Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 30 10.5 General Description The TSG10N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
tsg10n06at.pdf

TSG10N06AT Wuxi Unigroup Microelectronics Co.,Ltd. 60V N-Channel DTMOS Product Summary Features Trench Power DTMOS Technology VDS 60V Low RDS(ON) RDS(ON) (at VGS=10V)
Datasheet: CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 , NGTG15N60S1 , NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , GT30J127 , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 .
History: IHW20N135R3 | GT30F123 | IRG7I319U | RJH60F6BDPQ-A0 | SG50N06D2S | 2MBI50N-060 | FGA15N120FTD
Keywords - TSG10N120CN transistor datasheet
TSG10N120CN cross reference
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History: IHW20N135R3 | GT30F123 | IRG7I319U | RJH60F6BDPQ-A0 | SG50N06D2S | 2MBI50N-060 | FGA15N120FTD



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