All IGBT. AP20GT60W Datasheet

 

AP20GT60W IGBT. Datasheet pdf. Equivalent

Type Designator: AP20GT60W

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 125

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 40

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 20

Maximum Collector Capacity (Cc), pF: 75

Package: TO247

AP20GT60W Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AP20GT60W Datasheet (PDF)

1.1. ap20gt60w.pdf Size:92K _igbt_a

AP20GT60W
AP20GT60W

AP20GT60W RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C ▼ High Speed Switching IC 20A ▼ Low Saturation Voltage VCE(sat),typ.=1.8V@IC=20A C G ▼ RoHS Compliant Product G C TO-3P E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Voltag

1.2. ap20gt60w.pdf Size:92K _a-power

AP20GT60W
AP20GT60W

AP20GT60W RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C Ў High Speed Switching IC 20A Ў Low Saturation Voltage VCE(sat),typ.=1.8V@IC=20A C G Ў RoHS Compliant Product G C TO-3P E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Voltage +20

2.1. ap20gt60i.pdf Size:93K _igbt_a

AP20GT60W
AP20GT60W

AP20GT60I RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V ▼ High Speed Switching IC 20A G ▼ Low Saturation Voltage C E TO-220CFM(I) VCE(sat),typ.=1.8V@IC=20A C ▼ RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Vol

2.2. ap20gt60sw.pdf Size:60K _igbt_a

AP20GT60W
AP20GT60W

AP20GT60SW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C ▼ High Speed Switching IC 20A ▼ Low Saturation Voltage VCE(sat),Typ.=1.8V@IC=20A C G ▼ Built-in Fast Recovery Diode C TO-3P G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter V

2.3. ap20gt60asi-hf.pdf Size:95K _igbt_a

AP20GT60W
AP20GT60W

AP20GT60ASI-HF RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V ▼ High Speed Switching IC 12A G ▼ Low Saturation Voltage C E TO-220CFM(I) VCE(sat),typ.=1.7V@IC=12A C ▼ RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter

2.4. ap20gt60asp-hf.pdf Size:95K _igbt_a

AP20GT60W
AP20GT60W

AP20GT60ASP-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V ▼ High Speed Switching IC 19A G ▼ Low Saturation Voltage TO-220(P) C E VCE(sat),typ.=1.7V@IC=19A C ▼ RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Vol

2.5. ap20gt60p-hf.pdf Size:59K _igbt_a

AP20GT60W
AP20GT60W

AP20GT60P-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V ▼ High Speed Switching IC 20A G ▼ Low Saturation Voltage TO-220(P) C E VCE(sat),typ.=1.8V@IC=20A C ▼ RoHS Compliant & Halogen-Free G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emi

2.6. ap20gt60i.pdf Size:93K _a-power

AP20GT60W
AP20GT60W

AP20GT60I RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V Ў High Speed Switching IC 20A G Ў Low Saturation Voltage C E TO-220CFM(I) VCE(sat),typ.=1.8V@IC=20A C Ў RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Voltage +

2.7. ap20gt60sw.pdf Size:60K _a-power

AP20GT60W
AP20GT60W

AP20GT60SW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C Ў High Speed Switching IC 20A Ў Low Saturation Voltage VCE(sat),Typ.=1.8V@IC=20A C G Ў Built-in Fast Recovery Diode C TO-3P G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Voltage

2.8. ap20gt60asi-hf.pdf Size:95K _a-power

AP20GT60W
AP20GT60W

AP20GT60ASI-HF RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V Ў High Speed Switching IC 12A G Ў Low Saturation Voltage C E TO-220CFM(I) VCE(sat),typ.=1.7V@IC=12A C Ў RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Volta

2.9. ap20gt60asp-hf.pdf Size:95K _a-power

AP20GT60W
AP20GT60W

AP20GT60ASP-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V Ў High Speed Switching IC 19A G Ў Low Saturation Voltage TO-220(P) C E VCE(sat),typ.=1.7V@IC=19A C Ў RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Voltage +

2.10. ap20gt60p-hf.pdf Size:59K _a-power

AP20GT60W
AP20GT60W

AP20GT60P-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V Ў High Speed Switching IC 20A G Ў Low Saturation Voltage TO-220(P) C E VCE(sat),typ.=1.8V@IC=20A C Ў RoHS Compliant & Halogen-Free G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter V

Datasheet: NGTG15N60S1 , NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , IRGB14C40L , CI15T60 , MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG .

 


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