AP20GT60W PDF and Equivalents Search

 

AP20GT60W Specs and Replacement

Type Designator: AP20GT60W

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 125 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 75 pF

Package: TO3P

 AP20GT60W Substitution

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AP20GT60W datasheet

 ..1. Size:92K  ape
ap20gt60w.pdf pdf_icon

AP20GT60W

AP20GT60W RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C High Speed Switching IC 20A Low Saturation Voltage VCE(sat),typ.=1.8V@IC=20A C G RoHS Compliant Product G C TO-3P E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Voltag... See More ⇒

 6.1. Size:59K  ape
ap20gt60p-hf.pdf pdf_icon

AP20GT60W

AP20GT60P-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 20A G Low Saturation Voltage TO-220(P) C E VCE(sat),typ.=1.8V@IC=20A C RoHS Compliant & Halogen-Free G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emi... See More ⇒

 6.2. Size:95K  ape
ap20gt60asp-hf.pdf pdf_icon

AP20GT60W

AP20GT60ASP-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 19A G Low Saturation Voltage TO-220(P) C E VCE(sat),typ.=1.7V@IC=19A C RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Vol... See More ⇒

 6.3. Size:60K  ape
ap20gt60sw.pdf pdf_icon

AP20GT60W

AP20GT60SW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C High Speed Switching IC 20A Low Saturation Voltage VCE(sat),Typ.=1.8V@IC=20A C G Built-in Fast Recovery Diode C TO-3P G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter V... See More ⇒

Specs: NGTG15N60S1 , NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , IRG7R313U , CI15T60 , MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG .

History: VS-GT140DA60U

Keywords - AP20GT60W transistor spec

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History: VS-GT140DA60U

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