CI15T60 Datasheet and Replacement
Type Designator: CI15T60
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 125 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 74 pF
Qg ⓘ - Total Gate Charge, typ: 76 nC
Package: TO220AB
CI15T60 substitution
CI15T60 Datasheet (PDF)
ci15t60.pdf

CI15T6015A600V Field Stop Trench IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-220AB Short collector time-5us. High current capability.0.420(10.66)0.197(5.0)MAX High input impedance.0.386(9.80)0.055(1.40) Low saturation voltage : VCE(sat) = 1.65@25OC.0.043(1.10) Fast switching : 20KHz ~ 40KHz(Ta = 25OC)
Datasheet: NGTB15N60EG , IXYY8N90C3 , STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , IRG7R313U , MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 .
History: RJH60M6DPQ-A0
Keywords - CI15T60 transistor datasheet
CI15T60 cross reference
CI15T60 equivalent finder
CI15T60 lookup
CI15T60 substitution
CI15T60 replacement
History: RJH60M6DPQ-A0



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