All IGBT. IXYA8N90C3D1 Datasheet

 

IXYA8N90C3D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXYA8N90C3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 125
   Maximum Collector-Emitter Voltage |Vce|, V: 900
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 20
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.15
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 20
   Collector Capacity (Cc), typ, pF: 30
   Total Gate Charge (Qg), typ, nC: 13.3
   Package: TO263

 IXYA8N90C3D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYA8N90C3D1 Datasheet (PDF)

 ..1. Size:336K  ixys
ixya8n90c3d1.pdf

IXYA8N90C3D1
IXYA8N90C3D1

Preliminary Technical Information900V XPTTM IGBTs VCES = 900VIXYA8N90C3D1GenX3TM w/Diode IC110 = 8AIXYP8N90C3D1 VCE(sat) 2.5V tfi(typ) = 130nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 900 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 V

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , NGD8201N , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
Back to Top