IXYA8N90C3D1 IGBT. Datasheet pdf. Equivalent
Type Designator: IXYA8N90C3D1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 125
Maximum Collector-Emitter Voltage |Vce|, V: 900
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 20
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.15
Maximum G-E Threshold Voltag |VGE(th)|, V: 6
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 20
Collector Capacity (Cc), typ, pF: 30
Total Gate Charge (Qg), typ, nC: 13.3
Package: TO263
IXYA8N90C3D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXYA8N90C3D1 Datasheet (PDF)
ixya8n90c3d1.pdf
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Preliminary Technical Information900V XPTTM IGBTs VCES = 900VIXYA8N90C3D1GenX3TM w/Diode IC110 = 8AIXYP8N90C3D1 VCE(sat) 2.5V tfi(typ) = 130nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 900 VC (Tab)VCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 V
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
![IXYA8N90C3D1](https://alltransistors.com/images/us.png)
![IXYA8N90C3D1](https://alltransistors.com/images/es.png)
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