IXYA8N90C3D1 PDF and Equivalents Search

 

IXYA8N90C3D1 PDF Specs and Replacement


   Type Designator: IXYA8N90C3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 30 pF
   Qg ⓘ - Total Gate Charge, typ: 13.3 nC
   Package: TO263
 

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IXYA8N90C3D1 PDF specs

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IXYA8N90C3D1

Preliminary Technical Information 900V XPTTM IGBTs VCES = 900V IXYA8N90C3D1 GenX3TM w/Diode IC110 = 8A IXYP8N90C3D1 VCE(sat) 2.5V tfi(typ) = 130ns High-Speed IGBT for 20-50 kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 900 V C (Tab) VCGR TJ = 25 C to 175 C, RGE = 1M 900 V VGES Continuous 20 V... See More ⇒

Specs: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

Keywords - IXYA8N90C3D1 transistor spec

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