All IGBT. WGW15G120W Datasheet

 

WGW15G120W IGBT. Datasheet pdf. Equivalent


   Type Designator: WGW15G120W
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 150
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 30
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.4
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 60
   Collector Capacity (Cc), typ, pF: 880
   Total Gate Charge (Qg), typ, nC: 85
   Package: TO247

 WGW15G120W Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

WGW15G120W Datasheet (PDF)

 ..1. Size:442K  winsemi
 wgw15g120w.pdf

WGW15G120W WGW15G120W

WGW15G120WWGW15G120WWGW15G120WWGW15G120WLow Loss IGBTLow Loss IGBTLow Loss IGBTLow Loss IGBTFeatures 15A,1200V,V (Typ.=2.4v)@I =15A & Tc=100CE(sat) Clow Gate charge(Typ.= 85nC) NPT Technology, Positive temperature coefficient Low EMIPb-free lead plating; RoHS compliantApplications General purpose inverter Frequency converters In

 5.1. Size:433K  winsemi
 wgw15g120n.pdf

WGW15G120W WGW15G120W

WGW15G120NWGW15G120NWGW15G120NWGW15G120NLow Loss IGBTLow Loss IGBTLow Loss IGBTLow Loss IGBTFeatures 15A,1200V,V (Typ.=2.4v)@I =15A & Tc=100CE(sat) C low Gate charge(Typ.= 85nC) NPT Technology, Positive temperature coefficient Low EMIPb-free lead plating; RoHS compliantApplications General purpose inverterFrequency convertersI

Datasheet: IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , IRG7R313U , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D .

 

 
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