All IGBT. IXYR50N120C3D1 Datasheet

 

IXYR50N120C3D1 Datasheet and Replacement


   Type Designator: IXYR50N120C3D1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 56 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 62 nS
   Coesⓘ - Output Capacitance, typ: 230 pF
   Package: ISOPLUS247
      - IGBT Cross-Reference

 

IXYR50N120C3D1 Datasheet (PDF)

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IXYR50N120C3D1

Advance Technical Information1200V XPTTM IGBT VCES = 1200VIXYR50N120C3D1GenX3TM w/ Diode IC90 = 32A VCE(sat) 4.0V (Electrically Isolated Tab)tfi(typ) = 43nsHigh-Speed IGBTfor 20-50 kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VV

Datasheet: APT36GA60B , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 , APT35GA90B , APT35GA90BD15 , APT35GA90S , APT35GA90SD15 , CRG40T60AN3H , APT33GF120BRG , RJH60F6BDPQ-A0 , AP50G60SW-HF , BSM100GAL120DLCK , TGAN25N120ND , AOK50B60D1 , AOK40B60D , CIF25P120P .

History: IRG8B08N120KD | IRG4PC50FPBF | RJP60V0DPM | MG300N1US1 | GT10G101 | JNG20T60FS | BSM150GB170DLC

Keywords - IXYR50N120C3D1 transistor datasheet

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