All IGBT. IXYR50N120C3D1 Datasheet

 

IXYR50N120C3D1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXYR50N120C3D1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 290 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 56 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 62 nS
   Coesⓘ - Output Capacitance, typ: 230 pF
   Qgⓘ - Total Gate Charge, typ: 142 nC
   Package: ISOPLUS247

 IXYR50N120C3D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYR50N120C3D1 Datasheet (PDF)

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 ixyr50n120c3d1.pdf

IXYR50N120C3D1 IXYR50N120C3D1

Advance Technical Information1200V XPTTM IGBT VCES = 1200VIXYR50N120C3D1GenX3TM w/ Diode IC90 = 32A VCE(sat) 4.0V (Electrically Isolated Tab)tfi(typ) = 43nsHigh-Speed IGBTfor 20-50 kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VV

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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