IXYR50N120C3D1 PDF and Equivalents Search

 

IXYR50N120C3D1 Specs and Replacement

Type Designator: IXYR50N120C3D1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 290 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 56 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃

tr ⓘ - Rise Time, typ: 62 nS

Coesⓘ - Output Capacitance, typ: 230 pF

Package: ISOPLUS247

 IXYR50N120C3D1 Substitution

- IGBT ⓘ Cross-Reference Search

 

IXYR50N120C3D1 datasheet

 ..1. Size:189K  ixys
 ixyr50n120c3d1.pdf pdf_icon

IXYR50N120C3D1

Advance Technical Information 1200V XPTTM IGBT VCES = 1200V IXYR50N120C3D1 GenX3TM w/ Diode IC90 = 32A VCE(sat) 4.0V (Electrically Isolated Tab) tfi(typ) = 43ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V VGES Continuous 20 V V... See More ⇒

Specs: APT36GA60B , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 , APT35GA90B , APT35GA90BD15 , APT35GA90S , APT35GA90SD15 , CRG40T60AN3H , APT33GF120BRG , RJH60F6BDPQ-A0 , AP50G60SW-HF , BSM100GAL120DLCK , TGAN25N120ND , AOK50B60D1 , AOK40B60D , CIF25P120P .

History: SGM75HF12A1TFD1

Keywords - IXYR50N120C3D1 transistor spec

 IXYR50N120C3D1 cross reference
 IXYR50N120C3D1 equivalent finder
 IXYR50N120C3D1 lookup
 IXYR50N120C3D1 substitution
 IXYR50N120C3D1 replacement

 

 

 

 

↑ Back to Top
.