CIF25P120P IGBT. Datasheet pdf. Equivalent
Type Designator: CIF25P120P
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 313 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 52 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 75 nS
Coesⓘ - Output Capacitance, typ: 450 pF
Qgⓘ - Total Gate Charge, typ: 220 nC
Package: TO247
CIF25P120P Transistor Equivalent Substitute - IGBT Cross-Reference Search
CIF25P120P Datasheet (PDF)
cif25p120p.pdf
CIF25P120P25A1200V Planar NPT IGBT Features Outline Positive temperature Co-efficient for easy parallel operation. TO-247 High current capability.0.201(5.10) High input impedance.0.626(15.9)0.193(4.90)0.618(15.7) Suffix "G" indicates Halogen-free part, ex.CIF25P120PG.0.083(2.1)0.146(3.7) 0.075(1.9)MAX Mechanical dataMarking code Epoxy :
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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