TGH30N120FD Datasheet and Replacement
Type Designator: TGH30N120FD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 329 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 105 pF
Qg ⓘ - Total Gate Charge, typ: 220 nC
Package: TO247
TGH30N120FD substitution
TGH30N120FD Datasheet (PDF)
tgh30n120fd.pdf
TGH30N120FDField Stop Trench IGBTFeatures: 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationApplications :G C EInduction Heating, Soft switching applicationDevice Package Marking RemarkTGH30N120FD TO-247 TGH30N120FD RoHSAbsolute
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: 1MBI800UG-330 | MG25Q6ES51
Keywords - TGH30N120FD transistor datasheet
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History: 1MBI800UG-330 | MG25Q6ES51
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