TGH30N120FD PDF and Equivalents Search

 

TGH30N120FD Specs and Replacement

Type Designator: TGH30N120FD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 329 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 105 pF

Package: TO247

 TGH30N120FD Substitution

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TGH30N120FD datasheet

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 tgh30n120fd.pdf pdf_icon

TGH30N120FD

TGH30N120FD Field Stop Trench IGBT Features 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification Applications G C E Induction Heating, Soft switching application Device Package Marking Remark TGH30N120FD TO-247 TGH30N120FD RoHS Absolute... See More ⇒

Specs: TGAN25N120ND , AOK50B60D1 , AOK40B60D , CIF25P120P , RJH60F7BDPQ-A0 , APT45GP120JDQ2 , APT50GP60JDQ2 , TGAN30N120FD , IKW75N60T , APT44GA60B , APT44GA60BD30 , APT44GA60S , APT44GA60SD30 , APT43GA90B , APT43GA90BD30 , APT43GA90S , APT43GA90SD30 .

Keywords - TGH30N120FD transistor spec

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