VS-EMG050J60N Specs and Replacement
Type Designator: VS-EMG050J60N
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 338 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 88 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 29 nS
Coesⓘ - Output Capacitance, typ: 780 pF
Package: EMIPAK2 VS-EMG050J60N Substitution - IGBT ⓘ Cross-Reference Search
VS-EMG050J60N datasheet
vs-emg050j60n.pdf
VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES NPT Warp2 PFC IGBT with low VCE(ON) Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA Operating frequency 60 kHz to 150 kHz Low internal inductances EMIPAK2 Low switching loss Compliant to RoHS Directive 2002/95/EC DE... See More ⇒
vs-emf050j60u.pdf
VS-EMF050J60U www.vishay.com Vishay Semiconductors 3-Levels Half-Bridge Inverter Stage, 60 A/57 A FEATURES Warp1 and Warp2 PFC IGBT FRED Pt and HEXFRED antiparallel diodes FRED Pt clamping diodes Integrated thermistor Square RBSOA EMIPAK2 Operating frequency 60 kHz to 150 kHz Low internal inductances PRODUCT SUMMARY Low switching loss 1 L... See More ⇒
Specs: APT44GA60B , APT44GA60BD30 , APT44GA60S , APT44GA60SD30 , APT43GA90B , APT43GA90BD30 , APT43GA90S , APT43GA90SD30 , IHW20N135R5 , VS-EMF050J60U , APT40GT60BRG , APT25GT120BRG , APT40GF120JRDQ2 , 70MT060WHTAPBF , TGAN60N60FD , APT35GN120BG , APT35GN120L2DQ2G .
Keywords - VS-EMG050J60N transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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