All IGBT. VS-EMG050J60N Datasheet

 

VS-EMG050J60N Datasheet and Replacement


   Type Designator: VS-EMG050J60N
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 338 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 88 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.3 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 780 pF
   Qgⓘ - Total Gate Charge, typ: 480 nC
   Package: EMIPAK2
      - IGBT Cross-Reference

 

VS-EMG050J60N Datasheet (PDF)

 ..1. Size:253K  vishay
 vs-emg050j60n.pdf pdf_icon

VS-EMG050J60N

VS-EMG050J60Nwww.vishay.comVishay SemiconductorsDual Mode PFC, 60 AFEATURES NPT Warp2 PFC IGBT with low VCE(ON) Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA Operating frequency 60 kHz to 150 kHz Low internal inductancesEMIPAK2 Low switching loss Compliant to RoHS Directive 2002/95/ECDE

 9.1. Size:279K  vishay
 vs-emf050j60u.pdf pdf_icon

VS-EMG050J60N

VS-EMF050J60Uwww.vishay.comVishay Semiconductors3-Levels Half-Bridge Inverter Stage, 60 A/57 AFEATURES Warp1 and Warp2 PFC IGBT FRED Pt and HEXFRED antiparallel diodes FRED Pt clamping diodes Integrated thermistor Square RBSOAEMIPAK2 Operating frequency 60 kHz to 150 kHz Low internal inductancesPRODUCT SUMMARY Low switching loss1 L

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: TIG111BF | AOTF15B65M1

Keywords - VS-EMG050J60N transistor datasheet

 VS-EMG050J60N cross reference
 VS-EMG050J60N equivalent finder
 VS-EMG050J60N lookup
 VS-EMG050J60N substitution
 VS-EMG050J60N replacement

 

 
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