VS-EMG050J60N IGBT. Datasheet pdf. Equivalent
Type Designator: VS-EMG050J60N
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 338
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 88
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.3
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 29
Collector Capacity (Cc), typ, pF: 780
Total Gate Charge (Qg), typ, nC: 480
Package: EMIPAK2
VS-EMG050J60N Transistor Equivalent Substitute - IGBT Cross-Reference Search
VS-EMG050J60N Datasheet (PDF)
vs-emg050j60n.pdf
VS-EMG050J60Nwww.vishay.comVishay SemiconductorsDual Mode PFC, 60 AFEATURES NPT Warp2 PFC IGBT with low VCE(ON) Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA Operating frequency 60 kHz to 150 kHz Low internal inductancesEMIPAK2 Low switching loss Compliant to RoHS Directive 2002/95/ECDE
vs-emf050j60u.pdf
VS-EMF050J60Uwww.vishay.comVishay Semiconductors3-Levels Half-Bridge Inverter Stage, 60 A/57 AFEATURES Warp1 and Warp2 PFC IGBT FRED Pt and HEXFRED antiparallel diodes FRED Pt clamping diodes Integrated thermistor Square RBSOAEMIPAK2 Operating frequency 60 kHz to 150 kHz Low internal inductancesPRODUCT SUMMARY Low switching loss1 L
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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