All IGBT. VS-EMF050J60U Datasheet

 

VS-EMF050J60U Datasheet and Replacement


   Type Designator: VS-EMF050J60U
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 338 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 88 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 46 nS
   Coesⓘ - Output Capacitance, typ: 780 pF
   Package: EMIPAK2
      - IGBT Cross-Reference

 

VS-EMF050J60U Datasheet (PDF)

 ..1. Size:279K  vishay
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VS-EMF050J60U

VS-EMF050J60Uwww.vishay.comVishay Semiconductors3-Levels Half-Bridge Inverter Stage, 60 A/57 AFEATURES Warp1 and Warp2 PFC IGBT FRED Pt and HEXFRED antiparallel diodes FRED Pt clamping diodes Integrated thermistor Square RBSOAEMIPAK2 Operating frequency 60 kHz to 150 kHz Low internal inductancesPRODUCT SUMMARY Low switching loss1 L

 9.1. Size:253K  vishay
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VS-EMF050J60U

VS-EMG050J60Nwww.vishay.comVishay SemiconductorsDual Mode PFC, 60 AFEATURES NPT Warp2 PFC IGBT with low VCE(ON) Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA Operating frequency 60 kHz to 150 kHz Low internal inductancesEMIPAK2 Low switching loss Compliant to RoHS Directive 2002/95/ECDE

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - VS-EMF050J60U transistor datasheet

 VS-EMF050J60U cross reference
 VS-EMF050J60U equivalent finder
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 VS-EMF050J60U substitution
 VS-EMF050J60U replacement

 

 
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