All IGBT. TGL60N100ND1 Datasheet

 

TGL60N100ND1 Datasheet and Replacement


   Type Designator: TGL60N100ND1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 463 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 210 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Package: TO264
      - IGBT Cross-Reference

 

TGL60N100ND1 Datasheet (PDF)

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TGL60N100ND1

TGL60N100ND1NPT trench IGBTFeatures: 1000V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationApplications :G C EInduction Heating, Soft switching applicationDevice Package Marking RemarkTGL60N100ND1 TO-264 TGL60N100ND1 RoHSAbsolute Maximum Ra

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: FGA40T65SHD | IGB30N60T | HGTP10N120BN | F3L75R07W2E3_B11 | STGB10M65DF2 | CT20ASL-8 | MMG75SR120UZA

Keywords - TGL60N100ND1 transistor datasheet

 TGL60N100ND1 cross reference
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