TGL60N100ND1 Specs and Replacement
Type Designator: TGL60N100ND1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 463 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
tr ⓘ - Rise Time, typ: 210 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Package: TO264
TGL60N100ND1 Substitution - IGBT ⓘ Cross-Reference Search
TGL60N100ND1 datasheet
tgl60n100nd1.pdf
TGL60N100ND1 NPT trench IGBT Features 1000V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification Applications G C E Induction Heating, Soft switching application Device Package Marking Remark TGL60N100ND1 TO-264 TGL60N100ND1 RoHS Absolute Maximum Ra... See More ⇒
Specs: APT50GT60BRDQ2G , APT50GT60BRG , APT50GT60SRG , APT100GN120J , APT80GP60JDQ3 , 100MT060WDF , APT30GN60SG , APT30GP60BG , TGAN60N60F2DS , APT64GA90B , APT64GA90B2D30 , APT64GA90LD30 , APT64GA90S , APT100GN60B2G , APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG .
History: SRE60N065FSU | RJH60M6DPQ-A0 | RJH60D6DPK | TSG40N120CE | SPT25N120F1A1T8TL | TP020N120CA | STGWA20M65DF2
Keywords - TGL60N100ND1 transistor spec
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History: SRE60N065FSU | RJH60M6DPQ-A0 | RJH60D6DPK | TSG40N120CE | SPT25N120F1A1T8TL | TP020N120CA | STGWA20M65DF2
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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