All IGBT. TGL60N100ND1 Datasheet

 

TGL60N100ND1 Datasheet and Replacement


   Type Designator: TGL60N100ND1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 463 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 210 nS
   Coesⓘ - Output Capacitance, typ: 150 pF
   Package: TO264
 

 TGL60N100ND1 substitution

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TGL60N100ND1 Datasheet (PDF)

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TGL60N100ND1

TGL60N100ND1NPT trench IGBTFeatures: 1000V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationApplications :G C EInduction Heating, Soft switching applicationDevice Package Marking RemarkTGL60N100ND1 TO-264 TGL60N100ND1 RoHSAbsolute Maximum Ra

Datasheet: APT50GT60BRDQ2G , APT50GT60BRG , APT50GT60SRG , APT100GN120J , APT80GP60JDQ3 , 100MT060WDF , APT30GN60SG , APT30GP60BG , RJH60F5DPQ-A0 , APT64GA90B , APT64GA90B2D30 , APT64GA90LD30 , APT64GA90S , APT100GN60B2G , APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG .

Keywords - TGL60N100ND1 transistor datasheet

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