All IGBT. MPMB75B120RH Datasheet

 

MPMB75B120RH Datasheet and Replacement


   Type Designator: MPMB75B120RH
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 50 nS
   Coesⓘ - Output Capacitance, typ: 444 pF
   Qg ⓘ - Total Gate Charge, typ: 300 nC
   Package: 7DM1
 

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MPMB75B120RH Datasheet (PDF)

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MPMB75B120RH

MPMB75B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-1 package BV = 1200V CES Low Conduction Loss : V = 2.8V (typ.) CE(sat)devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 10us at TC=100 switching noise in high frequency power Isolation Type

Datasheet: APT80GA60S , APT45GP120B2DQ2G , APT45GP120BG , APT80GA90B , APT80GA90LD40 , APT80GA90S , APT50GP60BG , APT50GP60SG , FGH40N60SFD , APT50GT120B2RDQ2G , APT50GT120B2RG , MPMB100B120RH , APT150GN120J , APT60GF120JRDQ3 , APT100GN60LDQ4G , 1MBI300N-120 , IXYX140N90C3 .

History: JNG75T120LS | IGC100T65T8RM | APT80GP60B2G

Keywords - MPMB75B120RH transistor datasheet

 MPMB75B120RH cross reference
 MPMB75B120RH equivalent finder
 MPMB75B120RH lookup
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