MPMB100B120RH Datasheet. Specs and Replacement
Type Designator: MPMB100B120RH 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
tr ⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 518 pF
Package: 7DM-1
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MPMB100B120RH datasheet
mpmb100b120rh.pdf
MPMB100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-1 package BV = 1200V CES Low Conduction Loss V = 2.8V (typ.) CE(sat) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Type ... See More ⇒
Specs: APT80GA90B, APT80GA90LD40, APT80GA90S, APT50GP60BG, APT50GP60SG, MPMB75B120RH, APT50GT120B2RDQ2G, APT50GT120B2RG, FGH40N60SFD, APT150GN120J, APT60GF120JRDQ3, APT100GN60LDQ4G, 1MBI300N-120, IXYX140N90C3, 1MBI200N-120, IXYX120N120C3, MPMD200B120RH
Keywords - MPMB100B120RH transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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