All IGBT. MPMD200B120RH Datasheet

 

MPMD200B120RH Datasheet and Replacement


   Type Designator: MPMD200B120RH
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1136 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 275 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 90 nS
   Coesⓘ - Output Capacitance, typ: 977 pF
   Qg ⓘ - Total Gate Charge, typ: 790 nC
   Package: 7DM3
 

 MPMD200B120RH substitution

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MPMD200B120RH Datasheet (PDF)

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MPMD200B120RH

MPM B120RHMD200B NPT & R d Type 1200V leN Rugged e V IGBT ModulGeneral D on DescriptioFeaatures MagnaChips IGBT Mod package dule 7DM-3 p BVCES= 1200VV Lo n Loss : VCE(sa = 2.7V (typ.) ow Conductionat)devices are optimized to ses and o reduce lossast & Soft Anti-Parallel FWD Fa D Sh ed : Min. 10ushort circuit rate s at TC=100 switch

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - MPMD200B120RH transistor datasheet

 MPMD200B120RH cross reference
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