MPMD200B120RH Specs and Replacement
Type Designator: MPMD200B120RH
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1136 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 275 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
tr ⓘ - Rise Time, typ: 90 nS
Coesⓘ - Output Capacitance, typ: 977 pF
Package: 7DM3 MPMD200B120RH Substitution - IGBT ⓘ Cross-Reference Search
MPMD200B120RH datasheet
mpmd200b120rh.pdf
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Specs: MPMB100B120RH , APT150GN120J , APT60GF120JRDQ3 , APT100GN60LDQ4G , 1MBI300N-120 , IXYX140N90C3 , 1MBI200N-120 , IXYX120N120C3 , SGT40N60NPFDPN , IXYX100N120C3 , APT80GP60B2G , APT75GP120B2G , APT100GN120B2G , MPMC200B120RH , F3L300R07PE4 , APT65GP60L2DQ2G , MPMD150B120RH .
Keywords - MPMD200B120RH transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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