MPMD200B120RH Datasheet and Replacement
Type Designator: MPMD200B120RH
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1136 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 275 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 90 nS
Coesⓘ - Output Capacitance, typ: 977 pF
Package: 7DM3
MPMD200B120RH substitution
MPMD200B120RH Datasheet (PDF)
mpmd200b120rh.pdf
MPM B120RHMD200B NPT & R d Type 1200V leN Rugged e V IGBT ModulGeneral D on DescriptioFeaatures MagnaChips IGBT Mod package dule 7DM-3 p BVCES= 1200VV Lo n Loss : VCE(sa = 2.7V (typ.) ow Conductionat)devices are optimized to ses and o reduce lossast & Soft Anti-Parallel FWD Fa D Sh ed : Min. 10ushort circuit rate s at TC=100 switch
Datasheet: MPMB100B120RH , APT150GN120J , APT60GF120JRDQ3 , APT100GN60LDQ4G , 1MBI300N-120 , IXYX140N90C3 , 1MBI200N-120 , IXYX120N120C3 , RJP30H1DPD , IXYX100N120C3 , APT80GP60B2G , APT75GP120B2G , APT100GN120B2G , MPMC200B120RH , F3L300R07PE4 , APT65GP60L2DQ2G , MPMD150B120RH .
Keywords - MPMD200B120RH transistor datasheet
MPMD200B120RH cross reference
MPMD200B120RH equivalent finder
MPMD200B120RH lookup
MPMD200B120RH substitution
MPMD200B120RH replacement
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
ksc2690 | bc546 datasheet | mpsa06 transistor | tta004b | 2sc1116 | 2n3565 equivalent | 10n60 | 2sc1061