IXYX100N120C3 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXYX100N120C3 Specs and Replacement

Type Designator: IXYX100N120C3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 188 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃

tr ⓘ - Rise Time, typ: 90 nS

Coesⓘ - Output Capacitance, typ: 353 pF

Package: PLUS247

IXYX100N120C3 Substitution

- IGBT ⓘ Cross-Reference Search

IXYX100N120C3 datasheet

..1. Size:289K ixys
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1200V XPTTM IGBT VCES = 1200V IXYK100N120C3 GenX3TM IC110 = 100A IXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 1200 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous ... See More ⇒

..2. Size:201K ixys
ixyx100n120c3.pdf pdf_icon

Advance Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYK100N120C3 GenX3TM IC110 = 100A IXYX100N120C3 VCE(sat) 3.5V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 1200 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous 20 V PLUS247 ... See More ⇒

3.1. Size:205K ixys
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Preliminary Technical Information 1200V XPTTM IGBTs VCES = 1200V IXYK100N120B3 GenX3TM IC110 = 100A IXYX100N120B3 VCE(sat) 2.6V tfi(typ) = 240ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-264 (IXYK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 175 C 1200 V Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V PLUS247 (IX... See More ⇒

6.1. Size:229K ixys
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