All IGBT. IXYX100N120C3 Datasheet

 

IXYX100N120C3 Datasheet and Replacement


   Type Designator: IXYX100N120C3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 188 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 90 nS
   Coesⓘ - Output Capacitance, typ: 353 pF
   Package: PLUS247
      - IGBT Cross-Reference

 

IXYX100N120C3 Datasheet (PDF)

 ..1. Size:289K  ixys
 ixyk100n120c3 ixyx100n120c3.pdf pdf_icon

IXYX100N120C3

1200V XPTTM IGBT VCES = 1200VIXYK100N120C3GenX3TM IC110 = 100AIXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous

 ..2. Size:201K  ixys
 ixyx100n120c3.pdf pdf_icon

IXYX100N120C3

Advance Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK100N120C3GenX3TM IC110 = 100AIXYX100N120C3 VCE(sat) 3.5V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 20 V PLUS247

 3.1. Size:205K  ixys
 ixyx100n120b3.pdf pdf_icon

IXYX100N120C3

Preliminary Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK100N120B3GenX3TM IC110 = 100AIXYX100N120B3 VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-264 (IXYK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 175C 1200 V TabVCGR TJ = 25C to 175C, RGE = 1M 1200 VPLUS247 (IX

 6.1. Size:229K  ixys
 ixyx100n65b3d1.pdf pdf_icon

IXYX100N120C3

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYK100N65B3D1IC110 = 100AGenX3TM w/ Diode IXYX100N65B3D1VCE(sat) 1.85Vtfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to 175C, RGE = 1M

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History: APTGF200U60D4 | GT50G101 | MMG15CB120X6TC | 2SH20 | AFGY100T65SPD | JT030N065SED | FD400R33KF2C

Keywords - IXYX100N120C3 transistor datasheet

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