IXYJ20N120C3D1 Datasheet. Specs and Replacement

Type Designator: IXYJ20N120C3D1  📄📄 

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 105 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 21 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V

tr ⓘ - Rise Time, typ: 29 nS

Coesⓘ - Output Capacitance, typ: 70 pF

Qg ⓘ - Total Gate Charge, typ: 53 nC

Package: TO247

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IXYJ20N120C3D1 datasheet

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IXYJ20N120C3D1

Preliminary Technical Information 1200V XPTTM IGBT VCES = 1200V IXYJ20N120C3D1 GenX3TM w/ Diode IC110 = 9A VCE(sat) 4.0V (Electrically Isolated Tab) tfi(typ) = 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES Con... See More ⇒

Specs: NGB8245, STGP19NC60H, NGB18N40A, NGB8204A, NGD18N40A, NGB15N41A, NGD15N41A, APT12GT60BRG, SGT40N60FD2PT, AP20GT60P-HF, IRG4BC30UDPBF, IRGSL6B60K, STGFW30NC60V, AOB5B60D, AP20GT60ASP-HF, IRG7RC10FD, IRG4BC20FD-S

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