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IXYJ20N120C3D1 Spec and Replacement


   Type Designator: IXYJ20N120C3D1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 105 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 21 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Package: TO247

 IXYJ20N120C3D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXYJ20N120C3D1 specs

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IXYJ20N120C3D1

Preliminary Technical Information 1200V XPTTM IGBT VCES = 1200V IXYJ20N120C3D1 GenX3TM w/ Diode IC110 = 9A VCE(sat) 4.0V (Electrically Isolated Tab) tfi(typ) = 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V G VGES Con... See More ⇒

Specs: NGB8245 , STGP19NC60H , NGB18N40A , NGB8204A , NGD18N40A , NGB15N41A , NGD15N41A , APT12GT60BRG , SGT40N60FD2PT , AP20GT60P-HF , IRG4BC30UDPBF , IRGSL6B60K , STGFW30NC60V , AOB5B60D , AP20GT60ASP-HF , IRG7RC10FD , IRG4BC20FD-S .

Keywords - IXYJ20N120C3D1 transistor spec

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