All IGBT. TGD30N40P Datasheet

 

TGD30N40P Datasheet and Replacement


   Type Designator: TGD30N40P
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 56.8 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 105 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Package: TO252
 

 TGD30N40P substitution

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TGD30N40P Datasheet (PDF)

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TGD30N40P

TGD30N40P Features: 400V Trench Technology High Speed Switching D-PAK Low Conduction Loss C Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G E Applications : Plasma Display Panel, Soft switching application, Device Package Packaging type Marking Remark TGD30N40P D-PAK Reel TGD30N40P RoHS Abs

Datasheet: AP20GT60P-HF , IRG4BC30UDPBF , IRGSL6B60K , STGFW30NC60V , AOB5B60D , AP20GT60ASP-HF , IRG7RC10FD , IRG4BC20FD-S , FGW75N60HD , AOD5B60D , AOTF15B60D , AOTF10B60D , IRG7IC30FD , RJP60V0DPM , NTE3301 , IRG7RC07SD , CPV363M4UPBF .

Keywords - TGD30N40P transistor datasheet

 TGD30N40P cross reference
 TGD30N40P equivalent finder
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