TGD30N40P Datasheet. Specs and Replacement

Type Designator: TGD30N40P  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 56.8 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 105 nS

Coesⓘ - Output Capacitance, typ: 50 pF

Package: TO252

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TGD30N40P datasheet

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TGD30N40P

TGD30N40P Features 400V Trench Technology High Speed Switching D-PAK Low Conduction Loss C Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G E Applications Plasma Display Panel, Soft switching application, Device Package Packaging type Marking Remark TGD30N40P D-PAK Reel TGD30N40P RoHS Abs... See More ⇒

Specs: AP20GT60P-HF, IRG4BC30UDPBF, IRGSL6B60K, STGFW30NC60V, AOB5B60D, AP20GT60ASP-HF, IRG7RC10FD, IRG4BC20FD-S, BT60T60ANFK, AOD5B60D, AOTF15B60D, AOTF10B60D, IRG7IC30FD, RJP60V0DPM, NTE3301, IRG7RC07SD, CPV363M4UPBF

Keywords - TGD30N40P transistor spec

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