T0600TB45A Datasheet and Replacement
Type Designator: T0600TB45A
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 4800 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 600 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
tr ⓘ - Rise Time, typ: 2100 nS
Package: MODULE
T0600TB45A substitution
T0600TB45A Datasheet (PDF)
t0600tb45a.pdf
Date:- 16 Feb, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0600TB45A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS
Datasheet: CPV363M4UPBF , CPV363M4KPBF , AP20GT60ASI-HF , AOTF5B60D , AP20GT60I , AP28G40GEM-HF , T0510VB45E , T0850VB25E , RJP63K2DPP-M0 , T1200TB25A , T0800EB45G , T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G .
History: OST75N65HEM2F
Keywords - T0600TB45A transistor datasheet
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History: OST75N65HEM2F
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