All IGBT. T0900EB45A Datasheet

 

T0900EB45A IGBT. Datasheet pdf. Equivalent


   Type Designator: T0900EB45A
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 7100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 900 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.05 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.3(typ) V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 3400 nS
   Qgⓘ - Total Gate Charge, typ: 5000 nC
   Package: MODULE

 T0900EB45A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

T0900EB45A Datasheet (PDF)

 ..1. Size:407K  ixys
 t0900eb45a.pdf

T0900EB45A T0900EB45A

Date:- 30 Oct, 2008Data Sheet Issue:- 1WESTCODEAn IXYS CompanyProvisional DataInsulated Gate Bi-Polar TransistorType T0900EB45AAbsolute Maximum RatingsMAXIMUMVOLTAGE RATINGS UNITSLIMITSV Collector emitter voltage 4500 VCESVDC link Permanent DC voltage for 100 FIT failure rate. 2800 VV Peak gate emitter voltage 20 VGESMAXIMUMRATINGS UNITSLIMITSI Co

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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