T0900EB45A Specs and Replacement
Type Designator: T0900EB45A
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 7100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 900 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.05 V @25℃
tr ⓘ - Rise Time, typ: 3400 nS
Package: MODULE T0900EB45A Substitution - IGBT ⓘ Cross-Reference Search
T0900EB45A datasheet
t0900eb45a.pdf
Date - 30 Oct, 2008 Data Sheet Issue - 1 WESTCODE An IXYS Company Provisional Data Insulated Gate Bi-Polar Transistor Type T0900EB45A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS V Collector emitter voltage 4500 V CES VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V V Peak gate emitter voltage 20 V GES MAXIMUM RATINGS UNITS LIMITS I Co... See More ⇒
Specs: AP20GT60I , AP28G40GEM-HF , T0510VB45E , T0850VB25E , T0600TB45A , T1200TB25A , T0800EB45G , T0800TB45E , GT30J124 , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G , T1800GB45A , T2400GB45E , AP26G40GEO-HF , AP28G40GEO .
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