T0900EB45A Datasheet and Replacement
Type Designator: T0900EB45A
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 7100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 900 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.05 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.3(typ) V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 3400 nS
Qgⓘ - Total Gate Charge, typ: 5000 nC
Package: MODULE
- IGBT Cross-Reference
T0900EB45A Datasheet (PDF)
t0900eb45a.pdf
Date:- 30 Oct, 2008Data Sheet Issue:- 1WESTCODEAn IXYS CompanyProvisional DataInsulated Gate Bi-Polar TransistorType T0900EB45AAbsolute Maximum RatingsMAXIMUMVOLTAGE RATINGS UNITSLIMITSV Collector emitter voltage 4500 VCESVDC link Permanent DC voltage for 100 FIT failure rate. 2800 VV Peak gate emitter voltage 20 VGESMAXIMUMRATINGS UNITSLIMITSI Co
Datasheet: AP20GT60I , AP28G40GEM-HF , T0510VB45E , T0850VB25E , T0600TB45A , T1200TB25A , T0800EB45G , T0800TB45E , GT50JR22 , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G , T1800GB45A , T2400GB45E , AP26G40GEO-HF , AP28G40GEO .
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