T2400GB45E Specs and Replacement
Type Designator: T2400GB45E
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 19000 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 2400 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
tr ⓘ - Rise Time, typ: 3800 nS
Package: MODULE T2400GB45E Substitution - IGBT ⓘ Cross-Reference Search
T2400GB45E datasheet
t2400gb45e.pdf
Date - 21 Nov, 2011 Data Sheet Issue - 1 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) Continuous DC collector curren... See More ⇒
Specs: T0800EB45G , T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G , T1800GB45A , GT30J127 , AP26G40GEO-HF , AP28G40GEO , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 .
History: RJH60D0DPM | SPT25N120F1A1T8TL | TP020N120CA | TGL60N100ND1 | SRE60N065FSU | TSG40N120CE | RJH60M6DPQ-A0
Keywords - T2400GB45E transistor spec
T2400GB45E cross reference
T2400GB45E equivalent finder
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History: RJH60D0DPM | SPT25N120F1A1T8TL | TP020N120CA | TGL60N100ND1 | SRE60N065FSU | TSG40N120CE | RJH60M6DPQ-A0
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