All IGBT. T2400GB45E Datasheet

 

T2400GB45E Datasheet and Replacement


   Type Designator: T2400GB45E
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 19000 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 2400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 3800 nS
   Package: MODULE
 

 T2400GB45E substitution

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T2400GB45E Datasheet (PDF)

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T2400GB45E

Date: - 21 Nov, 2011 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) Continuous DC collector curren

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SIGC04T60GS | STGW60H65DFB | SPT25N120U1 | IRGB4059DPBF | IXGX72N60B3H1 | 1MBI50FE-060 | BGF15T65SD

Keywords - T2400GB45E transistor datasheet

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