All IGBT. T2400GB45E Datasheet

 

T2400GB45E Datasheet and Replacement


   Type Designator: T2400GB45E
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 19000 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 4500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 2400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.3(typ) V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 3800 nS
   Qgⓘ - Total Gate Charge, typ: 17000 nC
   Package: MODULE
      - IGBT Cross-Reference

 

T2400GB45E Datasheet (PDF)

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T2400GB45E

Date: - 21 Nov, 2011 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) Continuous DC collector curren

Datasheet: T0800EB45G , T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G , T1800GB45A , SGT40N60NPFDPN , AP26G40GEO-HF , AP28G40GEO , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 .

History: IGC189T120T6RL

Keywords - T2400GB45E transistor datasheet

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