All IGBT. AP26G40GEO-HF Datasheet

 

AP26G40GEO-HF Datasheet and Replacement


   Type Designator: AP26G40GEO-HF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 1600 nS
   Coesⓘ - Output Capacitance, typ: 45 pF
   Package: TSSOP8
      - IGBT Cross-Reference

 

AP26G40GEO-HF Datasheet (PDF)

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AP26G40GEO-HF

AP26G40GEO-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR ICP=150A @VGE=3.0V VCE 400VC Low Gate Drive ICP 150ACCC Strobe Flash Applications RoHS Compliant & Halogen-Free CGEETSSOP-8GEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPPeak Gate-E

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MMG300D120B6TC

Keywords - AP26G40GEO-HF transistor datasheet

 AP26G40GEO-HF cross reference
 AP26G40GEO-HF equivalent finder
 AP26G40GEO-HF lookup
 AP26G40GEO-HF substitution
 AP26G40GEO-HF replacement

 

 
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