All IGBT. AP26G40GEO-HF Datasheet

 

AP26G40GEO-HF Datasheet and Replacement


   Type Designator: AP26G40GEO-HF
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 1600 nS
   Coesⓘ - Output Capacitance, typ: 45 pF
   Package: TSSOP8
 

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AP26G40GEO-HF Datasheet (PDF)

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AP26G40GEO-HF

AP26G40GEO-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR ICP=150A @VGE=3.0V VCE 400VC Low Gate Drive ICP 150ACCC Strobe Flash Applications RoHS Compliant & Halogen-Free CGEETSSOP-8GEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPPeak Gate-E

Datasheet: T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G , T1800GB45A , T2400GB45E , FGH60N60SMD , AP28G40GEO , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 , RJP4301APP-M0 .

History: OST30N65KTXF

Keywords - AP26G40GEO-HF transistor datasheet

 AP26G40GEO-HF cross reference
 AP26G40GEO-HF equivalent finder
 AP26G40GEO-HF lookup
 AP26G40GEO-HF substitution
 AP26G40GEO-HF replacement

 

 
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