AP26G40GEO-HF Specs and Replacement
Type Designator: AP26G40GEO-HF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4.5 V @25℃
tr ⓘ - Rise Time, typ: 1600 nS
Coesⓘ - Output Capacitance, typ: 45 pF
Package: TSSOP8
AP26G40GEO-HF Substitution - IGBT ⓘ Cross-Reference Search
AP26G40GEO-HF datasheet
ap26g40geo-hf.pdf
AP26G40GEO-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR ICP=150A @VGE=3.0V VCE 400V C Low Gate Drive ICP 150A C C C Strobe Flash Applications RoHS Compliant & Halogen-Free C G E E TSSOP-8 G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter Voltage 400 V VGEP Peak Gate-E... See More ⇒
Specs: T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G , T1800GB45A , T2400GB45E , RJP30H2A , AP28G40GEO , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 , RJP4301APP-M0 .
Keywords - AP26G40GEO-HF transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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