SGTN50A36FD PDF and Equivalents Search

 

SGTN50A36FD Specs and Replacement

Type Designator: SGTN50A36FD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 360 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Coesⓘ - Output Capacitance, typ: 100 pF

Package: TO220F

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SGTN50A36FD datasheet

 ..1. Size:189K  kodenshi
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SGTN50A36FD

SGTN50A36FD Insulated Gate Bipolar Transistor, IGBT 360V, 50A High Speed Punch Through IGBT Features Low gate charge Punch Through Technology Low saturation voltage VCE(sat) = 1.6V (@ IC = 50A, TC = 25 C) RoHS compliant product Applications G C E General purpose inverters PDP UPS TO-220F-3L Ordering Information Column 1 Manufactur... See More ⇒

Specs: STGF7H60DF , RJP4301APP-00 , NTE3300 , RJP4301APP-M0 , NTE3302 , RJH60A83RDPP-M0 , RJH60D1DPP-E0 , RJH60V1BDPP-M0 , RJP63F3DPP-M0 , STGF10H60DF , STGF15H60DF , NGTB30N120L2 , NGTB30N120L2WG , NGTB40N120FL2 , NGTB40N120FL2WG , NGTB40N120S , NGTB40N120SWG .

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