All IGBT. IKW60N60H3 Datasheet

 

IKW60N60H3 Datasheet and Replacement


   Type Designator: IKW60N60H3
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K60H603
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 416 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 160 pF
   Qgⓘ - Total Gate Charge, typ: 375 nC
   Package: TO247
      - IGBT Cross-Reference

 

IKW60N60H3 Datasheet (PDF)

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IKW60N60H3

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW60N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIKW60N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low turn-off en

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