All IGBT. IKW60N60H3 Datasheet

 

IKW60N60H3 Datasheet and Replacement


   Type Designator: IKW60N60H3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 416 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 160 pF
   Package: TO247
 

 IKW60N60H3 substitution

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IKW60N60H3 Datasheet (PDF)

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IKW60N60H3

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW60N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIKW60N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low turn-off en

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: JT015N065CED | 70MT060WHTAPBF | CM150DX-24A | 2MBI600VE-120-50 | IXGH15N120B2D1 | JT015N065FED | 2MBI600VD-060-50

Keywords - IKW60N60H3 transistor datasheet

 IKW60N60H3 cross reference
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