IKW60N60H3 PDF and Equivalents Search

 

IKW60N60H3 Specs and Replacement

Type Designator: IKW60N60H3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 416 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 44 nS

Coesⓘ - Output Capacitance, typ: 160 pF

Package: TO247

 IKW60N60H3 Substitution

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IKW60N60H3 datasheet

 ..1. Size:1652K  infineon
 ikw60n60h3.pdf pdf_icon

IKW60N60H3

IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW60N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IKW60N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features TRENCHSTOPTM technology offering very low turn-off en... See More ⇒

Specs: NGTB40N120S , NGTB40N120SWG , NGTB50N120FL2 , NGTB50N120FL2WG , NGTG40N120FL2 , NGTG40N120FL2WG , IKW75N65EL5 , IKZ75N65EL5 , YGW60N65F1A1 , IGW60N60H3 , NGTB40N60L2 , NGTB40N60L2WG , NGTB50N60FL2 , NGTB50N60FL2WG , NGTB50N60S1 , NGTB50N60S1WG , NGTB50N65FL2 .

Keywords - IKW60N60H3 transistor spec

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