All IGBT. IRGR2B60KD Datasheet


IRGR2B60KD IGBT. Datasheet pdf. Equivalent

Type Designator: IRGR2B60KD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 35

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.95

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 6.3

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 8.7

Maximum Collector Capacity (Cc), pF: 17

Package: TO252

IRGR2B60KD Transistor Equivalent Substitute - IGBT Cross-Reference Search


IRGR2B60KD Datasheet (PDF)

0.1. irgr2b60kd.pdf Size:753K _international_rectifier


IRGR2B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE CVCES = 600V Features Low VCE (ON) Non Punch Through IGBT technology IC = 3.7A, TC = 100C Low Diode VF TJ(MAX) = 150C G 10s Short Circuit Capability Square RBSOA VCE(ON) typ. = 1.95V E Ultra-soft Diode Reverse Recovery Characteristics n-channel

Datasheet: STGF30H60DF , IKA08N65F5 , IKA08N65H5 , IKA15N65F5 , IKA15N65H5 , RJH60D2DPP-E0 , RJH60V2BDPP-M0 , NTE3303 , 10N40C1D , STGF20H60DF , RJH60A85RDPP-M0 , RJH60V3BDPP-M0 , RJP5001APP-M0 , RJP5001APP-00 , RJQ6008DPM , KGF15N60FDA , RJQ6003DPM .


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