All IGBT. IRGR2B60KD Datasheet

 

IRGR2B60KD IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGR2B60KD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 35 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 6.3 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 8.7 nS
   Coesⓘ - Output Capacitance, typ: 17 pF
   Qgⓘ - Total Gate Charge, typ: 8 nC
   Package: TO252

 IRGR2B60KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGR2B60KD Datasheet (PDF)

 ..1. Size:753K  international rectifier
 irgr2b60kd.pdf

IRGR2B60KD IRGR2B60KD

IRGR2B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE CVCES = 600V Features Low VCE (ON) Non Punch Through IGBT technology IC = 3.7A, TC = 100C Low Diode VF TJ(MAX) = 150C G 10s Short Circuit Capability Square RBSOA VCE(ON) typ. = 1.95V E Ultra-soft Diode Reverse Recovery Characteristics n-channel

Datasheet: STGF30H60DF , IKA08N65F5 , IKA08N65H5 , IKA15N65F5 , IKA15N65H5 , RJH60D2DPP-E0 , RJH60V2BDPP-M0 , NTE3303 , SGP30N60 , STGF20H60DF , RJH60A85RDPP-M0 , RJH60V3BDPP-M0 , RJP5001APP-M0 , RJP5001APP-00 , RJQ6008DPM , KGF15N60FDA , RJQ6003DPM .

 

 
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