All IGBT. IRGR2B60KD Datasheet

 

IRGR2B60KD Datasheet and Replacement


   Type Designator: IRGR2B60KD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 35 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 6.3 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 8.7 nS
   Coesⓘ - Output Capacitance, typ: 17 pF
   Qg ⓘ - Total Gate Charge, typ: 8 nC
   Package: TO252
 

 IRGR2B60KD substitution

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IRGR2B60KD Datasheet (PDF)

 ..1. Size:753K  international rectifier
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IRGR2B60KD

IRGR2B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE CVCES = 600V Features Low VCE (ON) Non Punch Through IGBT technology IC = 3.7A, TC = 100C Low Diode VF TJ(MAX) = 150C G 10s Short Circuit Capability Square RBSOA VCE(ON) typ. = 1.95V E Ultra-soft Diode Reverse Recovery Characteristics n-channel

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: STGFW30H65FB

Keywords - IRGR2B60KD transistor datasheet

 IRGR2B60KD cross reference
 IRGR2B60KD equivalent finder
 IRGR2B60KD lookup
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 IRGR2B60KD replacement

 

 
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