IKP08N65H5 Datasheet. Specs and Replacement

Type Designator: IKP08N65H5  📄📄 

Type: IGBT + Anti-Parallel Diode

Marking Code: K08H655

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 70 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 18 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V

tr ⓘ - Rise Time, typ: 5 nS

Coesⓘ - Output Capacitance, typ: 16 pF

Qg ⓘ - Total Gate Charge, typ: 22 nC

Package: TO220

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IKP08N65H5 datasheet

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IKP08N65H5

IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKP08N65H5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP08N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode ... See More ⇒

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IKP08N65H5

IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKP08N65F5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP08N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparal... See More ⇒

Specs: STGFW30V60DF, STGFW30V60F, STGFW40H65FB, STGD6NC60H-1, STGFW40V60F, STGFW40V60DF, RJH60V2BDPE, IKP08N65F5, IRG4PF50W, IKD04N60RA, IRG4MC30F, IRGB4610D, IRGR4045D, IRGR4610D, IRGS4045D, IRGS4610D, STGFW80V60F

Keywords - IKP08N65H5 transistor spec

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