All IGBT. IRG8B08N120KD Datasheet


IRG8B08N120KD IGBT. Datasheet pdf. Equivalent

Type Designator: IRG8B08N120KD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 89

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Collector-Emitter saturation Voltage |Vcesat|, V: 1.7

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 15

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 20

Maximum Collector Capacity (Cc), pF: 30

Package: TO220AB

IRG8B08N120KD Transistor Equivalent Substitute - IGBT Cross-Reference Search


IRG8B08N120KD Datasheet (PDF)

0.1. irg8b08n120kd.pdf Size:659K _international_rectifier


IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V CIC = 8A, TC =100C tSC 10s, TJ(max) = 150C E C GE C E VCE(ON) typ. = 1.7V @ IC = 5A G C G G ETO-247AD TO-220AB TO-247AC IRG8P08N120KD-EPbF Applications IRG8B08N120KDPbF IRG8P08N120KDPbF n-channel Ind

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .


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