IRG8B08N120KD Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IRG8B08N120KD Specs and Replacement

Type Designator: IRG8B08N120KD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 89 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 30 pF

Package: TO220AB

IRG8B08N120KD Substitution

- IGBT ⓘ Cross-Reference Search

IRG8B08N120KD datasheet

..1. Size:659K international rectifier
irg8b08n120kd.pdf pdf_icon

IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 8A, TC =100 C tSC 10 s, TJ(max) = 150 C E C G E C E VCE(ON) typ. = 1.7V @ IC = 5A G C G G E TO-247AD TO-220AB TO-247AC IRG8P08N120KD-EPbF Applications IRG8B08N120KDPbF IRG8P08N120KDPbF n-channel Ind... See More ⇒

Specs: IRGR4610D , IRGS4045D , IRGS4610D , STGFW80V60F , IXA12IF1200PC , OM6526SA , STGB7H60DF , STGP7H60DF , GT30F124 , IRG8P08N120KD , IRGB4615D , IRGS4615D , RJH3077 , RJP63G4 , NTE3310 , KE703A , IKD06N60RA .