SGTN15C120HW Specs and Replacement
Type Designator: SGTN15C120HW
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
tr ⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Package: TO247
SGTN15C120HW Substitution - IGBT ⓘ Cross-Reference Search
SGTN15C120HW datasheet
sgtn15c120hw.pdf
SGTN15C120HW Insulated Gate Bipolar Transistor, IGBT 1200V, 15A High Speed Field Stop IGBT Features Low gate charge Field Sotp Technology Low saturation voltage VCE(sat) = 1.8V (@ IC = 15A, TC = 25 C) RoHS compliant product Applications G C E General purpose inverters Induction heating (IH) UPS TO-247 Ordering Information Column 1 ... See More ⇒
Specs: MMG25H120XB6TN , KGT15N135KDH , KGT15N135NDH , STGB30H60DF , STGP30H60DF , IKD10N60RA , IHW20N65R5 , IRG4MC50F , IKW50N60H3 , STGB18N40LZT4 , STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL , NGTB15N120FLWG , NGTB15N120L .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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