SGTN15C120HW IGBT. Datasheet pdf. Equivalent
Type Designator: SGTN15C120HW
Type: IGBT + Anti-Parallel Diode
Marking Code: N15C120H
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Qgⓘ - Total Gate Charge, typ: 100 nC
Package: TO247
SGTN15C120HW Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGTN15C120HW Datasheet (PDF)
sgtn15c120hw.pdf
SGTN15C120HW Insulated Gate Bipolar Transistor, IGBT 1200V, 15A High Speed Field Stop IGBT Features Low gate charge Field Sotp Technology Low saturation voltage: VCE(sat) = 1.8V (@ IC = 15A, TC = 25C) RoHS compliant product Applications G C E General purpose inverters Induction heating (IH) UPS TO-247 Ordering Information Column 1:
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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