F3L50R06W1E3_B11 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

F3L50R06W1E3_B11 Specs and Replacement

Type Designator: F3L50R06W1E3_B11

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 175 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 13 nS

Package: MODULE

F3L50R06W1E3_B11 Substitution

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F3L50R06W1E3_B11 datasheet

0.1. Size:865K infineon
f3l50r06w1e3 b11.pdf pdf_icon

Technische Information / Technical Information IGBT-Module F3L50R06W1E3_B11 IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC V = 600V CES I = 50A / I = 100A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikation... See More ⇒

2.1. Size:824K infineon
f3l50r06w1e3-b11.pdf pdf_icon

Specs: STGB20V60F , STGFW20V60F , STGP20V60DF , STGP20V60F , STGW20V60DF , STGW20V60F , STGWT20V60DF , STGWT20V60F , CRG75T65AK5HD , KGT15N120NDS , KGF30N60KDA , KGF30N60PA , IRG7PH35UD1-EP , IRG7PH35UD1M , IRG8P25N120KD , IGB30N60T , IGW30N60T .

History: STGP20V60DF | KGF30N60KDA

Keywords - F3L50R06W1E3_B11 transistor spec

F3L50R06W1E3_B11 cross reference
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F3L50R06W1E3_B11 substitution
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History: STGP20V60DF | KGF30N60KDA

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Last Update

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE

F3L50R06W1E3_B11 PDF and Equivalents Search