F3L50R06W1E3_B11 Datasheet and Replacement
Type Designator: F3L50R06W1E3_B11
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 175 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 13 nS
Package: MODULE
F3L50R06W1E3_B11 substitution
F3L50R06W1E3_B11 Datasheet (PDF)
f3l50r06w1e3 b11.pdf
Technische Information / Technical InformationIGBT-ModuleF3L50R06W1E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCV = 600VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikation
f3l50r06w1e3-b11.pdf
Technische Information / Technical InformationIGBT-ModuleF3L50R06W1E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCV = 600VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikation
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: BSM25GD120DN2_E3224 | APT50GS60SRDQ2G | IRG4BC40F | AUIRGP66524D0 | SRE15N060FSUDE | APTGT200U170D4 | AOTF10B60D
Keywords - F3L50R06W1E3_B11 transistor datasheet
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History: BSM25GD120DN2_E3224 | APT50GS60SRDQ2G | IRG4BC40F | AUIRGP66524D0 | SRE15N060FSUDE | APTGT200U170D4 | AOTF10B60D
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