F3L50R06W1E3_B11 Datasheet and Replacement
Type Designator: F3L50R06W1E3_B11
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 175 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 13 nS
Package: MODULE
F3L50R06W1E3_B11 substitution
F3L50R06W1E3_B11 Datasheet (PDF)
f3l50r06w1e3 b11.pdf
Technische Information / Technical InformationIGBT-ModuleF3L50R06W1E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCV = 600VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikation
f3l50r06w1e3-b11.pdf
Technische Information / Technical InformationIGBT-ModuleF3L50R06W1E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCV = 600VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikation
Datasheet: STGB20V60F , STGFW20V60F , STGP20V60DF , STGP20V60F , STGW20V60DF , STGW20V60F , STGWT20V60DF , STGWT20V60F , XNF15N60T , KGT15N120NDS , KGF30N60KDA , KGF30N60PA , IRG7PH35UD1-EP , IRG7PH35UD1M , IRG8P25N120KD , IGB30N60T , IGW30N60T .
History: IGC50T120T6RL | AUIRGP66524D0 | DIM800XSM45-TS001 | DL2G75SH6N | CM200E3U-24F | KGF30N60PA
Keywords - F3L50R06W1E3_B11 transistor datasheet
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History: IGC50T120T6RL | AUIRGP66524D0 | DIM800XSM45-TS001 | DL2G75SH6N | CM200E3U-24F | KGF30N60PA
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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