All IGBT. 25MT060WFAPBF Datasheet

 

25MT060WFAPBF Datasheet and Replacement


   Type Designator: 25MT060WFAPBF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 195 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 69 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.22 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Coesⓘ - Output Capacitance, typ: 714 pF
   Qgⓘ - Total Gate Charge, typ: 175 nC
   Package: MODULE
      - IGBT Cross-Reference

 

25MT060WFAPBF Datasheet (PDF)

 ..1. Size:325K  vishay
 25mt060wfapbf.pdf pdf_icon

25MT060WFAPBF

25MT060WFAPbFVishay High Power Products"Full Bridge" IGBT MTP (Warp Speed IGBT), 50 AFEATURES Generation 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoftreverse recovery Very low conduction and switching losses Optional SMT thermistor Al2O3 DBC Very low stray inductance design for high speed operation Speed 8 kHz to 60 kHz > 2

 0.1. Size:257K  vishay
 vs-25mt060wfapbf.pdf pdf_icon

25MT060WFAPBF

VS-25MT060WFAPbFwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Warp Speed IGBT), 50 AFEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMT thermistor Al2O3 DBC Very low stray inductance design for high speed operation Speed 8 kHz t

Datasheet: NGTB25N120IHL , IRGP6630D , NGTB20N120L , NGTB20N120LWG , NGTB25N120L , NGTB25N120LWG , NGTB30N120IHS , NGTB30N120IHSWG , GT50JR22 , MMG40H120XB6TN , 6SI75N12 , IRGB4630D , IRGP4630D , IRGS4630D , CI40T120P , KGF25N120KDA , AP40G120W .

History: APT65GP60JDQ2

Keywords - 25MT060WFAPBF transistor datasheet

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