6SI75N12 Specs and Replacement
Type Designator: 6SI75N12
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 103 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 720 pF
Package: MODULE 6SI75N12 Substitution - IGBT ⓘ Cross-Reference Search
6SI75N12 datasheet
6si75n12.pdf
6SI75N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units 1200 VCES V IC 103(75) TC= 25(80)oC A ICRM 206(150) TC= 25(80)oC, tP =1ms A _ VGES +20 V Ptot 200 W o _ _ TVj,(Tstg) TOPERATION ... See More ⇒
Specs: NGTB20N120L , NGTB20N120LWG , NGTB25N120L , NGTB25N120LWG , NGTB30N120IHS , NGTB30N120IHSWG , 25MT060WFAPBF , MMG40H120XB6TN , GT50JR22 , IRGB4630D , IRGP4630D , IRGS4630D , CI40T120P , KGF25N120KDA , AP40G120W , F4-25R12NS4 , IRG7PG35U .
History: NGTB25N120L | 25MT060WFAPBF
Keywords - 6SI75N12 transistor spec
6SI75N12 cross reference
6SI75N12 equivalent finder
6SI75N12 lookup
6SI75N12 substitution
6SI75N12 replacement
History: NGTB25N120L | 25MT060WFAPBF
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
2sc1115 | c3998 transistor | 2sa679 | 2sc3181 | 2sb324 | 2sc1904 | 2sc281 | m28s transistor