All IGBT. 6SI75N12 Datasheet

 

6SI75N12 Datasheet and Replacement


   Type Designator: 6SI75N12
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 103 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 720 pF
   Package: MODULE
      - IGBT Cross-Reference

 

6SI75N12 Datasheet (PDF)

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6SI75N12

6SI75N12NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values Units1200VCES VIC 103(75) TC= 25(80)oC AICRM 206(150) TC= 25(80)oC, tP =1ms A_VGES+20 VPtot 200 Wo_ _TVj,(Tstg) TOPERATION

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: ISL9V5045S3ST-F085 | IXGH64N60A3 | DM2G75SH6A | 1MB08D-120 | DAZF150G120XCA | 2MBI600VJ-120-50 | IXGT40N60C2D1

Keywords - 6SI75N12 transistor datasheet

 6SI75N12 cross reference
 6SI75N12 equivalent finder
 6SI75N12 lookup
 6SI75N12 substitution
 6SI75N12 replacement

 

 
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