All IGBT. 6SI75N12 Datasheet

 

6SI75N12 Datasheet and Replacement


   Type Designator: 6SI75N12
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 103 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 125 ℃
   tr ⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 720 pF
   Package: MODULE
 

 6SI75N12 substitution

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6SI75N12 Datasheet (PDF)

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6SI75N12

6SI75N12NPT IGBT ModulesDimensions in mm (1mm = 0.0394")TC = 25oC, unless otherwise specifiedAbsolute Maximum RatingsSymbol Conditions Values Units1200VCES VIC 103(75) TC= 25(80)oC AICRM 206(150) TC= 25(80)oC, tP =1ms A_VGES+20 VPtot 200 Wo_ _TVj,(Tstg) TOPERATION

Datasheet: NGTB20N120L , NGTB20N120LWG , NGTB25N120L , NGTB25N120LWG , NGTB30N120IHS , NGTB30N120IHSWG , 25MT060WFAPBF , MMG40H120XB6TN , FGD4536 , IRGB4630D , IRGP4630D , IRGS4630D , CI40T120P , KGF25N120KDA , AP40G120W , F4-25R12NS4 , IRG7PG35U .

History: STGP20V60F

Keywords - 6SI75N12 transistor datasheet

 6SI75N12 cross reference
 6SI75N12 equivalent finder
 6SI75N12 lookup
 6SI75N12 substitution
 6SI75N12 replacement

 

 
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