F4-25R12NS4 Datasheet and Replacement
Type Designator: F4-25R12NS4
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 210 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 40 nS
Package: MODULE
- IGBT Cross-Reference
F4-25R12NS4 Datasheet (PDF)
f4-25r12ns4.pdf
Technische Information / technical informationIGBT-ModuleF4-25R12NS4IGBT-modulesEconoPACK1 mit schnellem IGBT2 fr hochfrequentes Schalten als H-Brckenkonfiguration EconoPACK1 module with fast IGBT2 for high switching frequency as H-bridge configuration IGBT-Wechselrichter / IGBT-inverter Vorlufige Daten / preliminary dataHchstzulssige Werte / maximum rated values
f4-250r17mp4-b11.pdf
F4-250R17MP4_B11EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 DiodeEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodeV = 1700VCESI = 250A / I = 500AC nom CRMPotentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Mittelspannungsantriebe Medium voltage converters Windge
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
Keywords - F4-25R12NS4 transistor datasheet
F4-25R12NS4 cross reference
F4-25R12NS4 equivalent finder
F4-25R12NS4 lookup
F4-25R12NS4 substitution
F4-25R12NS4 replacement
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
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