F4-25R12NS4 Specs and Replacement
Type Designator: F4-25R12NS4
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 210 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
Package: MODULE F4-25R12NS4 Substitution - IGBT ⓘ Cross-Reference Search
F4-25R12NS4 datasheet
f4-25r12ns4.pdf
Technische Information / technical information IGBT-Module F4-25R12NS4 IGBT-modules EconoPACK 1 mit schnellem IGBT2 f r hochfrequentes Schalten als H-Br ckenkonfiguration EconoPACK 1 module with fast IGBT2 for high switching frequency as H-bridge configuration IGBT-Wechselrichter / IGBT-inverter Vorl ufige Daten / preliminary data H chstzul ssige Werte / maximum rated values ... See More ⇒
f4-250r17mp4-b11.pdf
F4-250R17MP4_B11 EconoDUAL 3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode EconoDUAL 3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode V = 1700V CES I = 250A / I = 500A C nom CRM Potentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Mittelspannungsantriebe Medium voltage converters Windge... See More ⇒
Specs: MMG40H120XB6TN , 6SI75N12 , IRGB4630D , IRGP4630D , IRGS4630D , CI40T120P , KGF25N120KDA , AP40G120W , FGA25N120ANTD , IRG7PG35U , STGB20H60DF , STGP20H60DF , STGW20H60DF , STGWT20H60DF , AUIRGP66524D0 , IRG7PH37K10D , AUIRGP4062D1 .
Keywords - F4-25R12NS4 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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