F4-25R12NS4 IGBT. Datasheet pdf. Equivalent
Type Designator: F4-25R12NS4
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 210 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 40 nS
Package: MODULE
F4-25R12NS4 Transistor Equivalent Substitute - IGBT Cross-Reference Search
F4-25R12NS4 Datasheet (PDF)
f4-25r12ns4.pdf
Technische Information / technical informationIGBT-ModuleF4-25R12NS4IGBT-modulesEconoPACK1 mit schnellem IGBT2 fr hochfrequentes Schalten als H-Brckenkonfiguration EconoPACK1 module with fast IGBT2 for high switching frequency as H-bridge configuration IGBT-Wechselrichter / IGBT-inverter Vorlufige Daten / preliminary dataHchstzulssige Werte / maximum rated values
f4-250r17mp4-b11.pdf
F4-250R17MP4_B11EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 DiodeEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodeV = 1700VCESI = 250A / I = 500AC nom CRMPotentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Mittelspannungsantriebe Medium voltage converters Windge
Datasheet: MMG40H120XB6TN , 6SI75N12 , IRGB4630D , IRGP4630D , IRGS4630D , CI40T120P , KGF25N120KDA , AP40G120W , CRG40T60AN3H , IRG7PG35U , STGB20H60DF , STGP20H60DF , STGW20H60DF , STGWT20H60DF , AUIRGP66524D0 , IRG7PH37K10D , AUIRGP4062D1 .
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