All IGBT. HGTD6N50E1 Datasheet

 

HGTD6N50E1 Datasheet and Replacement


   Type Designator: HGTD6N50E1
   Type: IGBT
   Marking Code: G6N50E
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 60 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 7.5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 32 nS
   Qg ⓘ - Total Gate Charge, typ: 6.9 nC
   Package: TO251
 

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HGTD6N50E1 Datasheet (PDF)

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HGTD6N50E1

HGTD6N40E1, HGTD6N40E1S,HGTD6N50E1, HGTD6N50E1S6A, 400V and 500V N-Channel IGBTsMarch 1997Features PackagesHGTD6N40E1, HGTD6N50E1 6A, 400V and 500VJEDEC TO-251AA VCE(ON): 2.5V Max.EMITTERCOLLECTOR TFALL: 1.0sGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR(FLANGE) High Input ImpedanceHGTD6N40E1S, HGTD6N50E1SApplicationsJEDEC TO

Datasheet: HGTD3N60A4S , HGTD3N60B3 , HGTD3N60B3S , HGTD3N60C3 , HGTD3N60C3S , HGT5A27N120BN , HGTD6N40E1 , HGTD6N40E1S , SGT60N60FD1P7 , HGTD6N50E1S , HGTD7N60A4S , HGTD7N60B3 , HGTD7N60B3S , HGTD7N60C3 , HGTD7N60C3S , HGT1S2N120CNS , HGTD8P50G1 .

History: HGTD7N60B3

Keywords - HGTD6N50E1 transistor datasheet

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