HGTD6N50E1S PDF and Equivalents Search

 

HGTD6N50E1S Specs and Replacement

Type Designator: HGTD6N50E1S

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 60 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 7.5 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃

tr ⓘ - Rise Time, typ: 32 nS

Package: TO252

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HGTD6N50E1S datasheet

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HGTD6N50E1S

HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S 6A, 400V and 500V N-Channel IGBTs March 1997 Features Packages HGTD6N40E1, HGTD6N50E1 6A, 400V and 500V JEDEC TO-251AA VCE(ON) 2.5V Max. EMITTER COLLECTOR TFALL 1.0 s GATE Low On-State Voltage Fast Switching Speeds COLLECTOR (FLANGE) High Input Impedance HGTD6N40E1S, HGTD6N50E1S Applications JEDEC TO... See More ⇒

Specs: HGTD3N60B3, HGTD3N60B3S, HGTD3N60C3, HGTD3N60C3S, HGT5A27N120BN, HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, NGD8201N, HGTD7N60A4S, HGTD7N60B3, HGTD7N60B3S, HGTD7N60C3, HGTD7N60C3S, HGT1S2N120CNS, HGTD8P50G1, HGTD8P50G1S

Keywords - HGTD6N50E1S transistor spec

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