All IGBT. NGTG50N60FLWG Datasheet

 

NGTG50N60FLWG Datasheet and Replacement


   Type Designator: NGTG50N60FLWG
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 223 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 43 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Package: TO247
      - IGBT Cross-Reference

 

NGTG50N60FLWG Datasheet (PDF)

 ..1. Size:169K  onsemi
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NGTG50N60FLWG

NGTG50N60FLWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System

 4.1. Size:174K  onsemi
ngtg50n60fwg.pdf pdf_icon

NGTG50N60FLWG

NGTG50N60FWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss.http://onsemi.comFeatures Optimized for Very Low VCEsat Low Switching Loss Reduces System Power Dissipation50 A, 600 V

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: CM100DU-24NFH | DM2G75SH6A | IXGH64N60A3 | IXGT40N60C2D1 | 6SI75N12 | ISL9V5045S3ST-F085 | 1MB08D-120

Keywords - NGTG50N60FLWG transistor datasheet

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