KGF50N60KDA PDF and Equivalents Search

 

KGF50N60KDA PDF Specs and Replacement


   Type Designator: KGF50N60KDA
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 277 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   tr ⓘ - Rise Time, typ: 45 nS
   Coesⓘ - Output Capacitance, typ: 250 pF
   Package: TO247
 

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KGF50N60KDA PDF specs

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KGF50N60KDA

SEMICONDUCTOR KGF50N60KDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand T... See More ⇒

Specs: NGTB30N65IHL2WG , KGT25N135KDH , STGWA30N120KD , KGF40N60PA , NGTB50N60FLWG , NGTB50N60FWG , NGTG50N60FLWG , NGTG50N60FWG , MBQ50T65FDSC , IKW30N65EL5 , IKW30N65NL5 , IHW40N65R5 , IKW40N65WR5 , NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF , 20MT120UFP .

Keywords - KGF50N60KDA transistor spec

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