All IGBT. HGTD8P50G1 Datasheet

 

HGTD8P50G1 IGBT. Datasheet pdf. Equivalent

Type Designator: HGTD8P50G1

Type of IGBT Channel: P-Channel

Maximum Power Dissipation (Pc), W: 66

Maximum Collector-Emitter Voltage |Vce|, V: 500

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 3

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 45

Package: TO251AA

HGTD8P50G1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTD8P50G1 IGBT. Datasheet pdf. Equivalent

Type Designator: HGTD8P50G1

Type of IGBT Channel: P-Channel

Maximum Power Dissipation (Pc), W: 66

Maximum Collector-Emitter Voltage |Vce|, V: 500

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 3

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 45

Package: TO251AA

HGTD8P50G1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HGTD8P50G1 Datasheet (PDF)

6.1. hgtd8p50.pdf Size:152K _harris_semi

HGTD8P50G1 HGTD8P50G1

HGTD8P50G1, S E M I C O N D U C T O R HGTD8P50G1S 8A, 500V P-Channel IGBTs May 1996 Features Package JEDEC TO-251AA • 8A, 500V EMITTER • 3.7V VCE(SAT) COLLECTOR GATE • Typical Fall Time - 1800ns • High Input Impedance (FLANGE) • TJ = +150oC COLLECTOR Description JEDEC TO-252AA The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar

Datasheet: HGTD6N50E1 , HGTD6N50E1S , HGTD7N60A4S , HGTD7N60B3 , HGTD7N60B3S , HGTD7N60C3 , HGTD7N60C3S , HGTD7N60C3S9A , GT15Q101 , HGTD8P50G1S , HGTD8P50G1S9A , HGTG10N120BN , HGTG10N120BND , HGTG11N120CN , HGTG11N120CND , HGTG12N60A4 , HGTG12N60A4D .

 

 
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