MM30G120B PDF and Equivalents Search

 

MM30G120B Specs and Replacement

Type Designator: MM30G120B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 270 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 35 nS

Package: TO247

 MM30G120B Substitution

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MM30G120B datasheet

 ..1. Size:249K  macmic
mm30g120b.pdf pdf_icon

MM30G120B

MM30G120B 1200V 30A IGBT January 2013 PRELIMINARY RoHS Compliant FEATURES Low switching losses Low EMI Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery V with positive temperature coefficient CE(sat) APPLICATIONS High frequency switching application Medical applications 1.Gate Motion/servo c... See More ⇒

Specs: STGWT30V60DF , STGWT30V60F , RJP60F5DPK , IRGP4650D , IGW50N65F5A , IGW50N65H5A , IKW50N65F5A , IKW50N65H5A , CRG60T60AN3H , IRGP4750D , 1MBI50U4F-120L-50 , KGF30N135NDH , IRGP4078D , NGTB15N120IH , NGTB15N120IHWG , IHW50N65R5 , IKW50N65WR5 .

History: ISL9V5045S3ST-F085 | HIA30N140IH-DA

Keywords - MM30G120B transistor spec

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