All IGBT. MM30G120B Datasheet

 

MM30G120B Datasheet and Replacement


   Type Designator: MM30G120B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 270 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 35 nS
   Package: TO247
      - IGBT Cross-Reference

 

MM30G120B Datasheet (PDF)

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MM30G120B

MM30G120B 1200V 30A IGBT January 2013 PRELIMINARY RoHS Compliant FEATURES Low switching losses Low EMI Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery V with positive temperature coefficient CE(sat)APPLICATIONS High frequency switching application Medical applications 1.Gate Motion/servo c

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: NCE30TD60BP | FD200R12PT4_B6

Keywords - MM30G120B transistor datasheet

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