MM30G120B Datasheet and Replacement
Type Designator: MM30G120B
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 270 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 35 nS
Package: TO247
MM30G120B substitution
MM30G120B Datasheet (PDF)
mm30g120b.pdf
MM30G120B 1200V 30A IGBT January 2013 PRELIMINARY RoHS Compliant FEATURES Low switching losses Low EMI Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery V with positive temperature coefficient CE(sat)APPLICATIONS High frequency switching application Medical applications 1.Gate Motion/servo c
Datasheet: STGWT30V60DF , STGWT30V60F , RJP60F5DPK , IRGP4650D , IGW50N65F5A , IGW50N65H5A , IKW50N65F5A , IKW50N65H5A , CRG40T60AN3H , IRGP4750D , 1MBI50U4F-120L-50 , KGF30N135NDH , IRGP4078D , NGTB15N120IH , NGTB15N120IHWG , IHW50N65R5 , IKW50N65WR5 .
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