All IGBT. IHW50N65R5 Datasheet

 

IHW50N65R5 IGBT. Datasheet pdf. Equivalent


   Type Designator: IHW50N65R5
   Type: IGBT + Anti-Parallel Diode
   Marking Code: H50ER5
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 282 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 55 pF
   Qgⓘ - Total Gate Charge, typ: 230 nC
   Package: TO247

 IHW50N65R5 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IHW50N65R5 Datasheet (PDF)

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 ihw50n65r5.pdf

IHW50N65R5 IHW50N65R5

Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW50N65R5Data sheetIndustrial Power ControlIHW50N65R5Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru

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