IHW50N65R5 Datasheet and Replacement

   Type Designator: IHW50N65R5
   Type: IGBT + Anti-Parallel Diode
   Marking Code: H50ER5
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 282 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 55 pF
   Qg ⓘ - Total Gate Charge, typ: 230 nC
   Package: TO247
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