IHW50N65R5 Specs and Replacement
Type Designator: IHW50N65R5
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 282 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Package: TO247
IHW50N65R5 Substitution - IGBT ⓘ Cross-Reference Search
IHW50N65R5 datasheet
ihw50n65r5.pdf
Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW50N65R5 Data sheet Industrial Power Control IHW50N65R5 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic reverse-conducting diode with low forward voltage TRENCHSTOPTM technology offers - very tight parameter distribution G - high ru... See More ⇒
Specs: IKW50N65H5A , MM30G120B , IRGP4750D , 1MBI50U4F-120L-50 , KGF30N135NDH , IRGP4078D , NGTB15N120IH , NGTB15N120IHWG , RJP63F3DPP-M0 , IKW50N65WR5 , STGB40V60F , STGP40V60F , STGW15M120DF3 , STGW40H60DLFB , STGW40H65DFB , STGW40H65FB , STGW40V60DF .
History: HIA30N140IH-DA | ISL9V5045S3ST-F085
Keywords - IHW50N65R5 transistor spec
IHW50N65R5 cross reference
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History: HIA30N140IH-DA | ISL9V5045S3ST-F085
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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