IHW50N65R5 Datasheet and Replacement
Type Designator: IHW50N65R5
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 282 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Package: TO247
IHW50N65R5 substitution
IHW50N65R5 Datasheet (PDF)
ihw50n65r5.pdf
Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeIHW50N65R5Data sheetIndustrial Power ControlIHW50N65R5Resonant Switching SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic reverse-conducting diode with low forwardvoltage TRENCHSTOPTM technology offers:- very tight parameter distributionG- high ru
Datasheet: IKW50N65H5A , MM30G120B , IRGP4750D , 1MBI50U4F-120L-50 , KGF30N135NDH , IRGP4078D , NGTB15N120IH , NGTB15N120IHWG , FGA60N65SMD , IKW50N65WR5 , STGB40V60F , STGP40V60F , STGW15M120DF3 , STGW40H60DLFB , STGW40H65DFB , STGW40H65FB , STGW40V60DF .
History: IXSH30N60CD1 | IXXX200N60C3 | GT60M301 | DDB6U180N16RR-B11 | IXYX40N450HV | IXGF32N170 | DGC40F65M2
Keywords - IHW50N65R5 transistor datasheet
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History: IXSH30N60CD1 | IXXX200N60C3 | GT60M301 | DDB6U180N16RR-B11 | IXYX40N450HV | IXGF32N170 | DGC40F65M2
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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