All IGBT. STGP40V60F Datasheet

 

STGP40V60F Datasheet and Replacement


   Type Designator: STGP40V60F
   Type: IGBT
   Marking Code: GP40V60F
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 283 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 17 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Qg ⓘ - Total Gate Charge, typ: 226 nC
   Package: TO220AB
 

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STGP40V60F Datasheet (PDF)

 ..1. Size:650K  st
 stgb40v60f stgfw40v60f stgp40v60f stgw40v60f.pdf pdf_icon

STGP40V60F

STGB40V60F, STGFW40V60F STGP40V60F, STGW40V60FDatasheetTrench gate field-stop IGBT, V series 600 V, 40 A very high speedFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off33122 1 VCE(sat) = 1.8 V (typ.) @ IC = 40 AD PAKTO-3PF Tight parameters distributionTAB Safe paralleling Low thermal resistance33221

 ..2. Size:1889K  st
 stgp40v60f.pdf pdf_icon

STGP40V60F

STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60FTrench gate field-stop IGBT, V series 600 V, 40 A very high speedDatasheet - production dataFeaturesTAB Maximum junction temperature: TJ = 175 C111 Tail-less switching off31 VCE(sat) = 1.8 V (typ.) @ IC = 40 A3D2PAK 21 Tight parameters distributionTAB TO-3PF Safe paralleling Low thermal

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

Keywords - STGP40V60F transistor datasheet

 STGP40V60F cross reference
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