HGTG20N120CN Datasheet. Specs and Replacement

Type Designator: HGTG20N120CN  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 390 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 63 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 17 nS

Package: TO247

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HGTG20N120CN datasheet

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HGTG20N120CN

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HGTG20N120CN

S E M I C O N D U C T O R HGTG20N120E2 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 34A, 1200V Latch Free Operation EMITTER Typical Fall Time - 780ns COLLECTOR GATE High Input Impedance COLLECTOR Low Conduction Loss (BOTTOM SIDE METAL) Description The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best ... See More ⇒

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HGTG20N120CN

S E M I C O N D U C T O R HGTG20N120E2 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 34A, 1200V Latch Free Operation EMITTER Typical Fall Time - 780ns COLLECTOR GATE High Input Impedance COLLECTOR Low Conduction Loss (BOTTOM SIDE METAL) Description The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best ... See More ⇒

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Specs: HGTG11N120CND, HGTG12N60A4, HGTG12N60A4D, HGTG12N60B3D, HGTG12N60C3D, HGTG12N60C3DR, HGTG18N120BN, HGTG18N120BND, IKW40T120, HGTG20N120CND, HGTG20N120E2, HGTG20N60A4, HGTG20N60A4D, HGTG20N60B3, HGTG20N60B3D, HGTG20N60C3, HGTG20N60C3D

Keywords - HGTG20N120CN transistor spec

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