HGTG20N120CN IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG20N120CN

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Collector Current |Ic|, A: 63

Maximum Junction Temperature (Tj), °C: 150

Package: TO247

HGTG20N120CN Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTG20N120CN IGBT. Datasheet pdf. Equivalent

Type Designator: HGTG20N120CN

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Collector Current |Ic|, A: 63

Maximum Junction Temperature (Tj), °C: 150

Package: TO247

HGTG20N120CN Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTG20N120CN Datasheet (PDF)

4.1. hgtg20n120.pdf Size:79K _harris_semi

S E M I C O N D U C T O R HGTG20N120E2 34A, 1200V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1200V • Latch Free Operation EMITTER • Typical Fall Time - 780ns COLLECTOR GATE • High Input Impedance COLLECTOR • Low Conduction Loss (BOTTOM SIDE METAL) Description The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best

6.1. hgtg20n1.pdf Size:47K _harris_semi

S E M I C O N D U C T O R HGTG20N100D2 20A, 1000V N-Channel IGBT May 1995 Features Package JEDEC STYLE TO-247 • 34A, 1000V EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) Description The HGTG20N100D2 is a MOS gated high voltage switching device combining the best featur

 7.1. hgtg20n60b3d.pdf Size:176K _fairchild_semi

HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 40A, 600V at TC = 25oC The HGTG20N60B3D is a MOS gated high voltage • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC switching device combining the best features of MOSFETs • Short Circuit Rated and bipolar transistors. The device has

7.2. hgt1s20n60c3s hgtp20n60c3 hgtg20n60c3.pdf Size:140K _fairchild_semi

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices • 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. These devices have the high input impedance of • Typical Fall Time. . . . . . . . . . . . . .

 7.3. hgtg20n60a4 hgtp20n60a4.pdf Size:136K _fairchild_semi

HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated • >100kHz Operation at 390V, 20A high voltage switching devices combining the best features • 200kHz Operation at 390V, 12A of MOSFETs and bipolar transistors. These devices have the • 600V Switching SOA Capability high input impedance of a

7.4. hgtg20n60b3.pdf Size:194K _fairchild_semi

HGTG20N60B3 Data Sheet October 2004 40A, 600V, UFS Series N-Channel IGBTs Features The HGTG20N60B3 is a Generation III MOS gated high • 40A, 600V at TC = 25oC voltage switching devices combining the best features of • 600V Switching SOA Capability MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC h

 7.5. hgtg20n60a4d.pdf Size:148K _fairchild_semi

HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode • >100kHz Operation At 390V, 20A The HGTG20N60A4D is a MOS gated high voltage switching • 200kHz Operation At 390V, 12A device combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. This device has the high input impedance o

7.6. hgtg20n60c3r.pdf Size:112K _harris_semi

HGTG20N60C3R, HGTP20N60C3R, S E M I C O N D U C T O R HGT1S20N60C3R, HGT1S20N60C3RS 40A, 600V, Rugged UFS Series N-Channel IGBTs January 1997 Features Description • 40A, 600V TJ = 25oC This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as • 600V Switching SOA Capability other high voltage switching applications. These

7.7. hgtg20n6.pdf Size:157K _harris_semi

S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG20N60B3D is a MOS gated high voltage switching

7.8. hgtg20n5.pdf Size:41K _harris_semi

S E M I C O N D U C T O R HGTG20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 • 20A, 500V EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR (BOTTOM SIDE • High Input Impedance METAL) • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The

Datasheet: HGTG11N120CND , HGTG12N60A4 , HGTG12N60A4D , HGTG12N60B3D , HGTG12N60C3D , HGTG12N60C3DR , HGTG18N120BN , HGTG18N120BND , SGW30N60HS , HGTG20N120CND , HGTG20N120E2 , HGTG20N60A4 , HGTG20N60A4D , HGTG20N60B3 , HGTG20N60B3D , HGTG20N60C3 , HGTG20N60C3D .

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