HGTG20N120CN Datasheet and Replacement
Type Designator: HGTG20N120CN
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 390 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 63 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 17 nS
Package: TO247
- IGBT Cross-Reference
HGTG20N120CN Datasheet (PDF)
hgtg20n120e2.pdf
S E M I C O N D U C T O R HGTG20N120E234A, 1200V N-Channel IGBTApril 1995Features PackageJEDEC STYLE TO-247 34A, 1200V Latch Free OperationEMITTER Typical Fall Time - 780ns COLLECTORGATE High Input ImpedanceCOLLECTOR Low Conduction Loss(BOTTOM SIDEMETAL)DescriptionThe HGTG20N120E2 is a MOS gated, high voltage switch-ing device combining the best
hgtg20n120.pdf
S E M I C O N D U C T O R HGTG20N120E234A, 1200V N-Channel IGBTApril 1995Features PackageJEDEC STYLE TO-247 34A, 1200V Latch Free OperationEMITTER Typical Fall Time - 780ns COLLECTORGATE High Input ImpedanceCOLLECTOR Low Conduction Loss(BOTTOM SIDEMETAL)DescriptionThe HGTG20N120E2 is a MOS gated, high voltage switch-ing device combining the best
Datasheet: HGTG11N120CND , HGTG12N60A4 , HGTG12N60A4D , HGTG12N60B3D , HGTG12N60C3D , HGTG12N60C3DR , HGTG18N120BN , HGTG18N120BND , CRG75T60AK3HD , HGTG20N120CND , HGTG20N120E2 , HGTG20N60A4 , HGTG20N60A4D , HGTG20N60B3 , HGTG20N60B3D , HGTG20N60C3 , HGTG20N60C3D .
History: SGH10N120RUFD | HMG40N60T | MGW20N120 | MWI30-12E6K | IXGK28N140B3H1 | IXSP10N60B2D1 | AIGW50N65H5
Keywords - HGTG20N120CN transistor datasheet
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History: SGH10N120RUFD | HMG40N60T | MGW20N120 | MWI30-12E6K | IXGK28N140B3H1 | IXSP10N60B2D1 | AIGW50N65H5
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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