HGTG20N120CND IGBT. Datasheet pdf. Equivalent
Type Designator: HGTG20N120CND
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 390 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 63 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 17 nS
Package: TO247
HGTG20N120CND Transistor Equivalent Substitute - IGBT Cross-Reference Search
HGTG20N120CND Datasheet (PDF)
hgtg20n120e2.pdf
S E M I C O N D U C T O R HGTG20N120E234A, 1200V N-Channel IGBTApril 1995Features PackageJEDEC STYLE TO-247 34A, 1200V Latch Free OperationEMITTER Typical Fall Time - 780ns COLLECTORGATE High Input ImpedanceCOLLECTOR Low Conduction Loss(BOTTOM SIDEMETAL)DescriptionThe HGTG20N120E2 is a MOS gated, high voltage switch-ing device combining the best
hgtg20n120.pdf
S E M I C O N D U C T O R HGTG20N120E234A, 1200V N-Channel IGBTApril 1995Features PackageJEDEC STYLE TO-247 34A, 1200V Latch Free OperationEMITTER Typical Fall Time - 780ns COLLECTORGATE High Input ImpedanceCOLLECTOR Low Conduction Loss(BOTTOM SIDEMETAL)DescriptionThe HGTG20N120E2 is a MOS gated, high voltage switch-ing device combining the best
Datasheet: HGTG12N60A4 , HGTG12N60A4D , HGTG12N60B3D , HGTG12N60C3D , HGTG12N60C3DR , HGTG18N120BN , HGTG18N120BND , HGTG20N120CN , MBQ50T65FESC , HGTG20N120E2 , HGTG20N60A4 , HGTG20N60A4D , HGTG20N60B3 , HGTG20N60B3D , HGTG20N60C3 , HGTG20N60C3D , HGTG20N60C3DR .
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