RJH65S04DPQ-A0 Datasheet and Replacement

Preliminary DatasheetRJH65S04DPQ-A0 R07DS0849EJ0001650V - 50A - IGBT Rev.0.01Application: Inverter Jul 06, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at CC = 30

Data Sheet RJH65T14DPQ-A0 650V - 50A - IGBT R07DS1256EJ0110Application: Induction Heating Rev.1.10 Microwave Oven Aug 31, 2018Features Optimized for current resonance application Low collector to emitter saturation voltage V = 1.45 V typ. (at I = 50 A, V = 15 V, Ta = 25 C) CE(sat) C GE Built in fast recovery diode in one package Trench gate and thin