All IGBT. RJH65S04DPQ-A0 Datasheet

 

RJH65S04DPQ-A0 Datasheet and Replacement


   Type Designator: RJH65S04DPQ-A0
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 378 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Package: TO247A
      - IGBT Cross-Reference

 

RJH65S04DPQ-A0 Datasheet (PDF)

 ..1. Size:68K  renesas
 rjh65s04dpq-a0.pdf pdf_icon

RJH65S04DPQ-A0

Preliminary DatasheetRJH65S04DPQ-A0 R07DS0849EJ0001650V - 50A - IGBT Rev.0.01Application: Inverter Jul 06, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tf = 80 ns typ. (at CC = 30

 9.1. Size:290K  renesas
 rjh65t14dpq-a0.pdf pdf_icon

RJH65S04DPQ-A0

Data Sheet RJH65T14DPQ-A0 650V - 50A - IGBT R07DS1256EJ0110Application: Induction Heating Rev.1.10 Microwave Oven Aug 31, 2018Features Optimized for current resonance application Low collector to emitter saturation voltage V = 1.45 V typ. (at I = 50 A, V = 15 V, Ta = 25 C) CE(sat) C GE Built in fast recovery diode in one package Trench gate and thin

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MMG75J120U6HN | TGAN40S160FD

Keywords - RJH65S04DPQ-A0 transistor datasheet

 RJH65S04DPQ-A0 cross reference
 RJH65S04DPQ-A0 equivalent finder
 RJH65S04DPQ-A0 lookup
 RJH65S04DPQ-A0 substitution
 RJH65S04DPQ-A0 replacement

 

 
Back to Top

 


 
.