1MBI75U4F-120L-50 PDF and Equivalents Search

 

1MBI75U4F-120L-50 PDF Specs and Replacement


   Type Designator: 1MBI75U4F-120L-50
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   tr ⓘ - Rise Time, typ: 100 nS
   Package: MODULE
 

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1MBI75U4F-120L-50 PDF specs

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1MBI75U4F-120L-50

http //www.fujielectric.com/products/semiconductor/ 1MBI75U4F-120L-50 IGBT Modules IGBT MODULE (U series) 1200V / 75A / 1 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter DB for Motor Drive AC and DC Servo Drive Amplifier (DB) Active PFC Industrial machines Maximum Ratings and Characteristics Absolute Maximum Ratings... See More ⇒

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1MBI75U4F-120L-50

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Specs: STGWA80H65DFB , STGWA80H65FB , STGWT80H65DFB , STGWT80H65FB , STGWT80V60DF , STGWT80V60F , 70MT060WSP , RJH65S04DPQ-A0 , FGL60N100BNTD , IRG7PH50K10D , MMG50A120B6C , MM40G120L , MMG100J060U , MMG50J120UZ , MMG100S060B6EN , 50MT060ULSTAPBF , VS-GB70LA60UF .

Keywords - 1MBI75U4F-120L-50 transistor spec

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