1MBI75U4F-120L-50 Datasheet and Replacement
Type Designator: 1MBI75U4F-120L-50
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 100 nS
Package: MODULE
1MBI75U4F-120L-50 substitution
1MBI75U4F-120L-50 Datasheet (PDF)
1mbi75u4f-120l-50.pdf
http://www.fujielectric.com/products/semiconductor/1MBI75U4F-120L-50 IGBT ModulesIGBT MODULE (U series)1200V / 75A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratings
Datasheet: STGWA80H65DFB , STGWA80H65FB , STGWT80H65DFB , STGWT80H65FB , STGWT80V60DF , STGWT80V60F , 70MT060WSP , RJH65S04DPQ-A0 , IXRH40N120 , IRG7PH50K10D , MMG50A120B6C , MM40G120L , MMG100J060U , MMG50J120UZ , MMG100S060B6EN , 50MT060ULSTAPBF , VS-GB70LA60UF .
History: DM2G100SH6A
Keywords - 1MBI75U4F-120L-50 transistor datasheet
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1MBI75U4F-120L-50 substitution
1MBI75U4F-120L-50 replacement
History: DM2G100SH6A
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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