1MBI75U4F-120L-50 IGBT. Datasheet pdf. Equivalent
Type Designator: 1MBI75U4F-120L-50
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 8.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 100 nS
Qgⓘ - Total Gate Charge, typ: 100 nC
Package: MODULE
1MBI75U4F-120L-50 Transistor Equivalent Substitute - IGBT Cross-Reference Search
1MBI75U4F-120L-50 Datasheet (PDF)
1mbi75u4f-120l-50.pdf
http://www.fujielectric.com/products/semiconductor/1MBI75U4F-120L-50 IGBT ModulesIGBT MODULE (U series)1200V / 75A / 1 in one packageFeaturesHigh speed switchingVoltage driveLow Inductance module structureApplicationsInverter DB for Motor DriveAC and DC Servo Drive Amplifier (DB)Active PFCIndustrial machinesMaximum Ratings and Characteristics Absolute Maximum Ratings
Datasheet: STGWA80H65DFB , STGWA80H65FB , STGWT80H65DFB , STGWT80H65FB , STGWT80V60DF , STGWT80V60F , 70MT060WSP , RJH65S04DPQ-A0 , IRG4PF50W , IRG7PH50K10D , MMG50A120B6C , MM40G120L , MMG100J060U , MMG50J120UZ , MMG100S060B6EN , 50MT060ULSTAPBF , VS-GB70LA60UF .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2