T0500NB25E Datasheet. Specs and Replacement

Type Designator: T0500NB25E  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 2600 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1250 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 500 A @25℃

Tj ⓘ - Maximum Junction Temperature: 125 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃

tr ⓘ - Rise Time, typ: 2200 nS

Package: MODULE

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T0500NB25E datasheet

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T0500NB25E

Date - 5 Sep, 2011 Data Sheet Issue - P1 WESTCODE An IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0500NB25E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS ... See More ⇒

Specs: MMG200D170B6EN, MMG200DR060B, MMG200DR060DE, MMG200DR060UA, MMG200DR060UK, MMG200DR060UZA, MMG200DR060UZK, MMG450WB060B6EN, IKW30N60H3, T0340VB45G, MMG800K060U6EN, MMG600K120U6HN, MMG600K120U6TN, MMG600K170U6EN, T0570VB25G, MMG600KR120U, MMG800K120U6HN

Keywords - T0500NB25E transistor spec

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