T0500NB25E Datasheet and Replacement
Type Designator: T0500NB25E
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 2600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1250 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 500 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
tr ⓘ - Rise Time, typ: 2200 nS
Package: MODULE
T0500NB25E substitution
T0500NB25E Datasheet (PDF)
t0500nb25e.pdf
Date:- 5 Sep, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0500NB25E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS
Datasheet: MMG200D170B6EN , MMG200DR060B , MMG200DR060DE , MMG200DR060UA , MMG200DR060UK , MMG200DR060UZA , MMG200DR060UZK , MMG450WB060B6EN , STGW60V60DF , T0340VB45G , MMG800K060U6EN , MMG600K120U6HN , MMG600K120U6TN , MMG600K170U6EN , T0570VB25G , MMG600KR120U , MMG800K120U6HN .
History: DM2G150SH6A | F3L300R12ME4_B23 | DIM800DCS12-A | MMG100J060U | DIM250PLM33-TL
Keywords - T0500NB25E transistor datasheet
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History: DM2G150SH6A | F3L300R12ME4_B23 | DIM800DCS12-A | MMG100J060U | DIM250PLM33-TL
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