T0500NB25E Datasheet and Replacement
Type Designator: T0500NB25E
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 2600 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1250 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 500 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 2200 nS
Qgⓘ - Total Gate Charge, typ: 4500 nC
Package: MODULE
- IGBT Cross-Reference
T0500NB25E Datasheet (PDF)
t0500nb25e.pdf
Date:- 5 Sep, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0500NB25E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS
Datasheet: MMG200D170B6EN , MMG200DR060B , MMG200DR060DE , MMG200DR060UA , MMG200DR060UK , MMG200DR060UZA , MMG200DR060UZK , MMG450WB060B6EN , IRG4PC50UD , T0340VB45G , MMG800K060U6EN , MMG600K120U6HN , MMG600K120U6TN , MMG600K170U6EN , T0570VB25G , MMG600KR120U , MMG800K120U6HN .
History: DGTD65T60S2PT | DF900R12IP4D
Keywords - T0500NB25E transistor datasheet
T0500NB25E cross reference
T0500NB25E equivalent finder
T0500NB25E lookup
T0500NB25E substitution
T0500NB25E replacement
History: DGTD65T60S2PT | DF900R12IP4D
LIST
Last Update
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
2g381 transistor | 2sc2383 transistor equivalent | 2sd669 transistor | 75n65kdf | c2274 transistor | c5200 2sc5200 transistor datasheet | d2390 datasheet | 2sa750 replacement