All IGBT. T0500NB25E Datasheet

 

T0500NB25E IGBT. Datasheet pdf. Equivalent


   Type Designator: T0500NB25E
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 2600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1250 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 500 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 2200 nS
   Qgⓘ - Total Gate Charge, typ: 4500 nC
   Package: MODULE

 T0500NB25E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

T0500NB25E Datasheet (PDF)

 ..1. Size:277K  ixys
 t0500nb25e.pdf

T0500NB25E T0500NB25E

Date:- 5 Sep, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0500NB25E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS

Datasheet: MMG200D170B6EN , MMG200DR060B , MMG200DR060DE , MMG200DR060UA , MMG200DR060UK , MMG200DR060UZA , MMG200DR060UZK , MMG450WB060B6EN , XNF15N60T , T0340VB45G , MMG800K060U6EN , MMG600K120U6HN , MMG600K120U6TN , MMG600K170U6EN , T0570VB25G , MMG600KR120U , MMG800K120U6HN .

 

 
Back to Top