T0340VB45G Datasheet and Replacement
Type Designator: T0340VB45G
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 2700 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 2800 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 340 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.2 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 3200 nS
Qgⓘ - Total Gate Charge, typ: 6500 nC
Package: MODULE
- IGBT Cross-Reference
T0340VB45G Datasheet (PDF)
t0340vb45g.pdf
Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) DC collector current, IGBT 34
Datasheet: MMG200DR060B , MMG200DR060DE , MMG200DR060UA , MMG200DR060UK , MMG200DR060UZA , MMG200DR060UZK , MMG450WB060B6EN , T0500NB25E , STGW60V60DF , MMG800K060U6EN , MMG600K120U6HN , MMG600K120U6TN , MMG600K170U6EN , T0570VB25G , MMG600KR120U , MMG800K120U6HN , MMG400K170U6EN .
History: IGC189T120T6RL
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History: IGC189T120T6RL
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