All IGBT. T0340VB45G Datasheet

 

T0340VB45G IGBT. Datasheet pdf. Equivalent


   Type Designator: T0340VB45G
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 2700 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 2800 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 340 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.75 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.2 V
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 3200 nS
   Qgⓘ - Total Gate Charge, typ: 6500 nC
   Package: MODULE

 T0340VB45G Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

T0340VB45G Datasheet (PDF)

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 t0340vb45g.pdf

T0340VB45G T0340VB45G

Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) DC collector current, IGBT 34

Datasheet: MMG200DR060B , MMG200DR060DE , MMG200DR060UA , MMG200DR060UK , MMG200DR060UZA , MMG200DR060UZK , MMG450WB060B6EN , T0500NB25E , GT30J127 , MMG800K060U6EN , MMG600K120U6HN , MMG600K120U6TN , MMG600K170U6EN , T0570VB25G , MMG600KR120U , MMG800K120U6HN , MMG400K170U6EN .

 

 
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