All IGBT. T0340VB45G Datasheet

 

T0340VB45G IGBT. Datasheet pdf. Equivalent

Type Designator: T0340VB45G

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 2700

Maximum Collector-Emitter Voltage |Vce|, V: 2800

Collector-Emitter saturation Voltage |Vcesat|, V: 2.75

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 340

Maximum Junction Temperature (Tj), °C: 125

Rise Time, nS: 3200

Package: MODULE

T0340VB45G Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

T0340VB45G Datasheet (PDF)

1.1. t0340vb45g.pdf Size:493K _igbt

T0340VB45G
T0340VB45G

Date:- 6 August, 2012 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type T0340VB45G Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate – emitter voltage ±20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) DC collector current, IGBT 34

Datasheet: MMG200DR060B , MMG200DR060DE , MMG200DR060UA , MMG200DR060UK , MMG200DR060UZA , MMG200DR060UZK , MMG450WB060B6EN , T0500NB25E , SGH80N60UFD , MMG800K060U6EN , MMG600K120U6HN , MMG600K120U6TN , MMG600K170U6EN , T0570VB25G , MMG600KR120U , MMG800K120U6HN , MMG400K170U6EN .

 


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