T0570VB25G Specs and Replacement
Type Designator: T0570VB25G
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 2960 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1250 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 570 A @25℃
Tj ⓘ - Maximum Junction Temperature: 125 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
tr ⓘ - Rise Time, typ: 2500 nS
Package: MODULE T0570VB25G Substitution - IGBT ⓘ Cross-Reference Search
T0570VB25G datasheet
t0570vb25g.pdf
Date - 18 Jan, 2011 Data Sheet Issue - P1 WESTCODE An IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0570VB25G Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS ... See More ⇒
Specs: MMG200DR060UZK , MMG450WB060B6EN , T0500NB25E , T0340VB45G , MMG800K060U6EN , MMG600K120U6HN , MMG600K120U6TN , MMG600K170U6EN , RJH60F5DPQ-A0 , MMG600KR120U , MMG800K120U6HN , MMG400K170U6EN , IRG7PSH54K10D , MMG100S060B6R , MMG75S170B6EN , MMG150HB060B6EN , MMG150S060B6R .
Keywords - T0570VB25G transistor spec
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