All IGBT. T0570VB25G Datasheet

 

T0570VB25G IGBT. Datasheet pdf. Equivalent


   Type Designator: T0570VB25G
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 2960 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1250 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 570 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 125 ℃
   trⓘ - Rise Time, typ: 2500 nS
   Package: MODULE

 T0570VB25G Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

T0570VB25G Datasheet (PDF)

 ..1. Size:432K  ixys
 t0570vb25g.pdf

T0570VB25G T0570VB25G

Date:- 18 Jan, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0570VB25G Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS

Datasheet: MMG200DR060UZK , MMG450WB060B6EN , T0500NB25E , T0340VB45G , MMG800K060U6EN , MMG600K120U6HN , MMG600K120U6TN , MMG600K170U6EN , MBQ40T65FDSC , MMG600KR120U , MMG800K120U6HN , MMG400K170U6EN , IRG7PSH54K10D , MMG100S060B6R , MMG75S170B6EN , MMG150HB060B6EN , MMG150S060B6R .

 

 
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