T0570VB25G Datasheet and Replacement
Type Designator: T0570VB25G
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 2960 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1250 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 570 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
Tjⓘ - Maximum Junction Temperature: 125 ℃
trⓘ - Rise Time, typ: 2500 nS
Qgⓘ - Total Gate Charge, typ: 4000 nC
Package: MODULE
- IGBT Cross-Reference
T0570VB25G Datasheet (PDF)
t0570vb25g.pdf
Date:- 18 Jan, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0570VB25G Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate. 1250 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS
Datasheet: MMG200DR060UZK , MMG450WB060B6EN , T0500NB25E , T0340VB45G , MMG800K060U6EN , MMG600K120U6HN , MMG600K120U6TN , MMG600K170U6EN , FGH75T65UPD , MMG600KR120U , MMG800K120U6HN , MMG400K170U6EN , IRG7PSH54K10D , MMG100S060B6R , MMG75S170B6EN , MMG150HB060B6EN , MMG150S060B6R .
History: IGC189T120T6RL
Keywords - T0570VB25G transistor datasheet
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History: IGC189T120T6RL
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